cas 63744-11-6, BIS(TRIMETHYLSILYL)AMIDODIMETHYLPHOSPHINE | Articles data ｜lookchem

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63744-11-6

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Synthesis and some oxidation reactions of [bis(trimethylsilyl)amino]dimethylphosphine
The synthesis, characterization, and some reactions of [bis(trimethylsilyl)amino]dimethylphosphine (1) are reported. Although compound 1 was routinely prepared via the reaction of LiN(SiMe3)2 and Me2PCl, it was also isolat
Wilburn, James C.,Neilson, Robert H.
p. 2519 - 2521
(1977)
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RAW MATERIAL FOR FORMING THIN FILM AND MANUFACTURING METHOD FOR THIN FILM
PROBLEM TO BE SOLVED: To provide a raw material for forming a thin film excellent in thermal stability, reactivity with reactive gas and step coverage property and capable of being applied to an ALD method, and to provide a raw material for forming a thin film capable of providing the thin film having the content of phosphorus of 10 to 20 mass%. SOLUTION: A raw material for forming a thin film has a silicon compound represented by the general formula (1). In the formula (1), R1 to R3 represent each independently an alkyl group having 1 to 4 carbon atoms and X represents a monovalent organic residue having a phosphorus element. COPYRIGHT: (C)2015,JPOandINPIT
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(2016/12/12)

Dimethylsilylaminophosphane heterocyclization of isothiocyanates to diazaphosphole-thiones through zwitterionic intermediates
Isothiocyanates react with Me2P- N(SiMe3)2 with elimination of (Me3Si)2Stogivenew structurally characterized heterocyclic diazaphosphole derivatives, and in one case the intermediate zwitteri- onic compound was isolated and structurally characterized.
Petrov, Petar Y.,Angelov, Christo M.,McDonald, Robert,Alexiev, Alexi,Cavell, Ronald G.
scheme or table
p. 196 - 202
(2011/07/09)

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Chemical Properties

Boiling Point: 203.88 °C at 760 mmHg
Flash Point:77.104 °C
Vapor Pressure: 0.271mmHg at 25°C
PSA: 16.83000
LogP: 3.61470

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