- Formation and thermal decomposition of indium oxynitride compounds
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During the reactions of lithium oxide with indium nitride, lithium nitride with indium oxide, and lithium nitride with lithium indate LiInO2, the formation of a previously unknown crystalline phase, of composition Li4InNO2, was observed. The course of thermal decomposition of the new compound was determined.
- Tokarzewski,Podsiadlo
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- EFFECTIVE SUPPORTED-In2O3 FOR THE PRODUCTION OF HYDROGEN FROM WATER BY THE REDUCTION-OXIDATION CYCLE OF In2O3
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Eleven kinds of carriers for In2O3 have been tested for the production of hydrogen from water by a reduction and oxidation cycle of In2O3.Of these, the most effective carriers were TiO2, ZrO2, active carbon and ZnO, because the high enchancing effects on the rates of reduction and oxidation and the high final yields of hydrogen by the reduced In2O3 have been observed by usihg these carriers.
- Otsuka, Kiyoshi,Shibuya, Shin-ichi,Morikawa, Akira
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- Electrodeposition of indium onto Mo/Cu for the deposition of Cu(In,Ga)Se2 thin films
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A study of the electrodeposition and the oxidation process of indium on Mo/Cu substrates from a bath containing 0.008 M InCl3, 0.7 M LiCl at pH 3 is described in this work. The voltamperometric study showed a reduction process which corresponds to the conversion of In3+ to In0 and an oxidation process which takes place in different steps. Utilizing the chronoamperometric technique the total efficiency of process, the number of monolayers, the film thickness and the diffusion coefficient were evaluated. The analysis of current transients, using theoretical growth model, showed that the electrodeposition of indium adjusts to a three-dimensional growth under instantaneous nucleation limited by diffusion. The kinetic growth parameters were evaluated through a non-linear fit. The films were characterized by X-ray diffraction and scanning electron microscopy techniques. These studies showed that the films were of crystalline in nature with compact and uniform surface, even for the film with a deposition time of 1 min.
- Valderrama,Miranda-Hernández,Sebastian,Ocampo
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- Pressure-induced decomposition of indium hydroxide
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A static pressure-induced decomposition of indium hydroxide into metallic indium that takes place at ambient temperature is reported. The lattice parameter of c-In(OH)3 decreased upon compression from 7.977(2) to ~7.45 A at 34 GPa, corresponding to a decrease in specific volume of ~18%. Fitting the second-order Birch-Murnaghan equation of state to the obtained compression data gave a bulk modulus of 99 ± 3 GPa for c-In(OH)3. The c-In(OH)3 crystals with a size of ~100 nm are comminuted upon compression, as indicated by the grain-size reduction reflected in broadening of the diffraction reflections and the appearance of smaller (~5 nm) incoherently oriented domains in TEM. The rapid decompression of compressed c-In(OH)3 leads to partial decomposition of indium hydroxide into metallic indium, mainly as a result of localized stress gradients caused by relaxation of the highly disordered indium sublattice in indium hydroxide. This partial decomposition of indium hydroxide into metallic indium is irreversible, as confirmed by angle-dispersive X-ray diffraction, transmission electron microscopy imaging, Raman scattering, and FTIR spectroscopy. Recovered c-In(OH)3 samples become completely black and nontransparent and show typical features of metals, i.e., a falling absorption in the 100-250 cm-1 region accompanied by a featureless spectrum in the 250-2500 cm-1 region in the Raman spectrum and Drude-like absorption of free electrons in the region of 4000-8000 cm-1 in the FTIR spectrum. These features were not observed in the initial c-In(OH) 3, which is a typical white wide-band-gap semiconductor.
- Gurlo, Aleksander,Dzivenko, Dmytro,Andrade, Miria,Riedel, Ralf,Lauterbach, Stefan,Kleebe, Hans-Joachim
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- Synthesis, characterisation and theoretical studies of amidinato-indium(I) and thallium(I) complexes: Isomers of neutral group 13 metal(I) carbene analogues
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The synthesis and characterisation of the monomeric amidinato-indium(I) and thallium(I) complexes, [M(Piso)]PisoH, M = In or Tl, Piso- = [ArNC(But)NAr]-, Ar = C6H3Pr 2i-2,6, are reported. These complexes, in which the metal centre is chelated by the amidinate ligand in an N,η3-arene- fashion, can be considered as isomers of four-membered group 13 metal(I) carbene analogues. Theoretical studies have compared the relative energies of both isomeric forms of a model complex, [In{PhNC(H)NPh}]. The Royal Society of Chemistry 2005.
- Jones, Cameron,Junk, Peter C.,Platts, Jamie A.,Rathmann, Daniel,Stasch, Andreas
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- Bidentate N-heterocyclic carbene complexes of group 13 trihydrides and trihalides
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Treatment of the potentially chelating bis-carbene, 1,2-ethylene-3,3′-di-tert-butyl-diimidazole-2,2′-diylidene, EtIBut, with [MH3(NMe3)], M= Al, Ga, In, in a 1:1 or 1:2 stoichiometery led to good yields of the metal rich 2
- Baker, Robert J.,Cole, Marcus L.,Jones, Cameron,Mahon, Mary F.
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- Reduction of indium(III) oxide to indium through mechanochemical route
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A nonthermal reduction of indium(III) oxide (In2O3) to metallic indium (In) was achieved through mechanochemical route in this work. A mixture of In2O3 and lithium nitride (Li3N) under ammonia (NH3) and/or nitrogen (N2) gas environments was milled in a planetary ball mill with uni-size ZrO2 balls to induce mechanochemical reaction between the starting materials. Metallic indium was obtained after milling for 120 min, and the results are confirmed by X-ray diffraction (XRD) analysis. Washing of the milled product with water to remove by-products using the planetary ball mill for a further 10 min resulted in formation of pellets which were analyzed by EPMA, results clearly show that high purity indium metal was obtained. Copyright
- Kano, Junya,Kobayashi, Eiko,Tongamp, William,Saito, Fumio
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- Synthesis of group 13 sesquialkoxides and their application as precursors to crystalline oxide films
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The reaction of Me3Ga with an excess of 4-methylbenzyl alcohol (4-MeC6H4CH2OH) in toluene, under reflux conditions, resulted in the formation of the sesquialkoxide [Ga{MeGa(OCH 2C6H4Me-4)3}3] (1). In contrast, reaction of Me3In with excess of 4-methylbenzyl alcohol (4-MeC6H4CH2OH) under the same conditions afforded another type of sesquialkoxide, [In{Me2In(OCH 2C6H4Me-4)2}3] (2). Compounds 1 and 2 have been characterized by NMR, FTIR, and elemental analysis, and the structure of 1 was determined by X-ray crystallography. The structure of 1 consists of a central Ga3+ ion coordinated by three [MeGa(OCH 2C6H4Me-4)(μ-OCH2C 6H4Me-4)2]- units such that it has a coordination number of six. The surrounding metal ions are four coordinate. 1H NMR data for 1 indicate that in solution two isomers (1:1) are present, namely, the C1- and C3-symmetrical isomers, but in the solid state 1 exists as the C3-symmetrical isomer. Compound 1 possesses the correct ratio of Ga:O atoms (2:3) for that found in gallium oxide (Ga2O3), and LPCVD of 1 afforded crystalline Ga 2O3 films at 600°C. These results are surprising, as Ga2O3 films are typically only crystalline above 700°C.
- Basharat, Siama,Betchley, William,Carmalt, Claire J.,Barnett, Sarah,Tocher, Derek A.,Davies, Hywel O.
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- Coordination Modes of 2,5-Di(tert-butyl)pyrrolide - Crystal Structures of HPyr*, Pyr*H·thf, (thf)2LiPyr*, and [(Me3Si)3C-Zn]2(μ-Cl)(μ-Pyr*) (Pyr* = 2,5-tBu2NC4H2)
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The lithiation of 2,5-di(tert-butyl)pyrrole (1) yields bis(tetrahydrofuran)lithium 2,5-di(tert-butyl)pyrrolide (2), which is monomeric in solution as well as in the solid state. Due to the coordination number of three for the lithium atom, short Li-O and
- Westerhausen, Matthias,Wieneke, Michael,Noeth, Heinrich,Seifert, Thomas,Pfitzner, Arno,Schwarz, Wolfgang,Schwarz, Oliver,Weidlein, Johann
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- Laser excitation and photoionization spectroscopy of the AO+ and B1 states of indium monoiodide: Ground state dissociation energy and photodissociation yield of In(6s2S1/2)
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The dissociation energy of the InI ground state (X1Σ+(O+)) and the relative yield of In(6s 2S1/2) from the photodissociation of InI by sequential two-photon absorption have been measured by laser-indu
- King,Herring,Eden
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- Fabrication and electrical and thermal properties of Ti2InC, Hf2InC and (Ti,Hf)2InC
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In this paper we report on the characterization of predominantly single phase, fully dense Ti2InC (Ti1.96InC1.15), Hf2InC (Hf1.94InC1.26) and (Ti,Hf)2InC ((Ti0.47,Hf0.56)2InC1.26) samples produced by reactive hot isostatic pressing of the elemental powders. The a and c lattice parameters in nm, were, respectively: 0.3134; 1.4077 for Ti2InC; 0.322, 1.443 for (Ti,Hf)2InC; and 0.331 and 1.472 for Hf2InC. The heat capacities, thermal expansion coefficients, thermal and electrical conductivities were measured as a function of temperature. These ternaries are good electrical conductors with a resistivity that increases linearly with increasing temperatures. At 0.28 μΩ m, the room temperature resistivity of (Ti,Hf)2InC is higher than the end members (~0.2 μΩ m), indicating a solid solution scattering effect. In the 300 to 1273 K temperature range the thermal expansion coefficients are: 7.6×10-6 K-1 for Hf2InC, 9.5×10-6 K-1 for Ti2InC, and 8.6×10-6 K-1 for (Ti,Hf)2InC. They are all good conductors of heat (20 to 26 W/m K) with the electronic component of conductivity dominating at all temperatures. Extended exposure of Ti2InC to vacuum (~10-4 atm) at ~800 °C, results in the selective sublimation of In, and the conversion of Ti2InC to TiCx.
- Barsoum,Golczewski,Seifert,Aldinger
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- Controlled formation and size-selected deposition of indium nanoparticles from a microwave flow reactor on semiconductor surfaces
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Indium nanoparticles were synthesized in a microwave flow reactor by thermal decomposition of trimethylindium. The particles were extracted from the gas phase by molecular beam sampling, deflected in an electric field, and deposited on a semiconductor surface. The size of the deposited particles was selected by adjusting the deflection voltage. The geometric standard deviation of the size-selected particles was found to be smaller than 10%. The deposition method is compatible with epitaxial growth methods and enhances their potentials with nanoparticle technology.
- Hitzbleck, Klemens,Wiggers, Hartmut,Roth, Paul
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- Intermetallic compound formed by electrodeposition of indium on antimony
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Indium galvanostatic electrodeposition from aqueous solutions on antimony electrodes has been investigated together with time evolution of the deposit composition. The morphology, composition and structure of the deposit surface and cross-section have bee
- Kozlov, Valentin M.,Agrigento, Valeria,Bontempi, Danilo,Canegallo, Stefano,Moraitou, Cleanthi,Toussimi, Aikaterini,Bicelli, Luisa Peraldo,Serravalle, Giovanni
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- Chemical interaction of the In-Ga eutectic with Al and Al-base alloys
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The chemical interaction of the indium-gallium eutectic with Al and Al-base alloys is studied by x-ray diffraction, optical microscopy, and electron microscopy. Experimental data are presented that shed light on the reaction mechanism and the diffusion processes responsible for the subsequent disintegration of the material and its dissolution in water. Mechanical tests show that the activation of aluminum leads to a transition from plastic to brittle fracture. Pleiades Publishing, Inc., 2006.
- Trenikhin,Bubnov,Nizovskii,Duplyakin
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- Syntheses and structure of heterometallic complexes containing tripodal group 13 ligands [RE(2-py)3]- (E = Al, In)
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Reactions of the Al(III) complex [{MeAl(2-py)3}Li·HF] (1), containing the tripodal [MeAl(2-py)3]ligand, with [(C 7H8)Mo(CO)3], Cal2, and ZnCl 2 give the trimetallic and bimetalli
- Garcfa, Felipe,Hopkins, Alexander D.,Kowenicki, Richard A.,McPartlin, Mary,Rogers, Michael C.,Silvia, Jared S.,Wright, Dominic S.
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- Electrodeposition of palladium-indium from 1-ethyl-3-methylimidazolium chloride tetrafluoroborate ionic liquid
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Voltammetry at a glassy carbon electrode was used to study the electrochemical co-deposition of Pd-In from a chloride-rich 1-ethyl-3- methylimidazolium chloride/tetrafluoroborate air-stable room temperature ionic liquid at 120 °C. Deposition of Pd alone occurs prior to the overpotential deposition (OPD) of bulk In. However, underpotential deposition (UPD) of In on the deposited Pd was observed at the potential same as the deposition of Pd. The UPD of In on Pd was, however, limited by a slow charge transfer rate. Samples of Pd-In alloy coatings were prepared on nickel substrates and characterized by energy dispersive spectroscope (EDS), scanning electron microscope (SEM) and X-ray powder diffraction (XRD). The electrodeposited alloy composition was relatively independent on the deposition potential within the In UPD range. At more negative potentials where the OPD of Pd-In has reached mass-transport limited region, the alloy composition corresponds to the Pd(II)/In(III) composition in the plating bath. The Pd-In alloy coatings obtained by direct deposition of Pd and UPD of In on the deposited Pd appeared to be superior to the Pd-In alloys that were obtained via the co-deposition of Pd and bulk In at OPD potentials.
- Hsiu, Shu-I,Tai, Chia-Cheng,Sun, I-Wen
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- Synthesis of indium hollow spheres and nanotubes by a simple template-free solvothermal process
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Indium hollow spheres and nanotubes were successfully synthesized via a simple template-free solvothermal route at different temperatures. The products were characterized by X-ray powder diffraction and transmission electron microscopy.
- Zhang, Yunxia,Li, Guanghai,Zhang, Lide
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- Aqueous telluridoindate chemistry: Water-soluble salts of monomeric, dimeric, and trimeric In/Te anions [InTe4]5-, [In 2Te6]6-, and [In3Te 10]11-
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Water-soluble salts of monomeric, dimeric, and/or trimeric telluridoindate anions, [K5(H2O)2.16][InTe4] (1), [K5(H2O)5][InTe4] (2), [K 6(H2O)6][In2Te6] (3), [K16(H2O)9.62][InTe4] 2[In2Te6] (4), [K133(H 2O)24][In3Te10]12Te 0.5 (5), and [Rb6(H2O)6][In 2Te6] (6), were prepared by a fusion/extraction method starting from the elements and characterized by single-crystal X-ray diffraction as well as spectroscopic methods. The compounds are the first hydrates of telluridoindate salts and thus point toward an aqueous coordination chemistry with binary In/Te ligands. Both crystallization from the extracts as mixtures of salts as well as preliminary spectroscopic investigation of the solutions indicate the presence of an equilibrium of different anionic species. Here, the indates differ from related stannates, which also show pH-dependent aggregation, but to a much lesser extent and in a better distinguishable manner. We present syntheses and crystal structures and discuss observation of the coexistence of different anions both in the solid state and in solution.
- Heine, Johanna,Dehnen, Stefanie
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- New insight into indium electrochemistry in a Tf2N-based room-temperature ionic liquid
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The electrodeposition of indium is reported in a new weakly hygroscopic piperidinium-based ionic liquid (1-butyl-1-ethyl-piperidinium bis(trifluoromethylsulfonyl)imide) that allows electrodeposition to be performed without a glove box. The electrochemistry of indium is thoroughly investigated and the drawbacks of using metal chloride precursors in Tf2N-based electrolytes are highlighted using cyclic voltammetry and stripping experiments. Voltammograms revealed complex electrochemical behaviour and several cathodic and anodic signals that could be attributed to the formation of indium chloro complexes during the scan, due to changes in the concentration ratio [Cl -]/[In(III)] of interfacial species during the In(III) reduction reaction. A procedure for the electrodeposition of indium avoiding the use of the indium chloride precursor is then proposed. It offers an improved morphology of the electrodeposit and an increase in faradic yield from 33% to 85% compared to chloride-containing RTILs.
- Traore, Youssouf,Legeai, Sophie,Diliberto, Sébastien,Arrachart, Guilhem,Pellet-Rostaing, Stéphane,Draye, Micheline
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- Die 3-(N,N-dimethylamino)prop-1-enyl-gruppe als chelatligand in organoindium-verbindungen The 3-(N,N-dimethylamino)prop-1-enyl group as a chelate ligand in indium organyls
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InBr3 reacts with Mc2NCH2CH=CHMgCl (molar ratio 1:2) to form (Me2NCH2CH=CH)2InBr (1) as the first indium alkenyl compound with amino-functionalized alkenyl groups. The X-ray structure determination shows the formation of a chelate complex. 1 crystallizes in the orthorhombic space group Fddd with the unit cell parameters a = 14.904(2) A, b = 17.140(1) A and c = 21.035(2) A. By reaction of Me2InBr with Me2NCH2CH=CHMgCl (molar ratio 1 : 1) (Me2NCH2CH=CH)InMe2 (2) is formed as a colorless, at room temperature liquid, monomeric compound. The n.m.r. and mass spectra are discussed.
- Herbrich, Thomas,Thiele, Karl-Heinz,Merzweiler, Kurt
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- Intrinsic magnetic properties of In2O3 and transition metal-doped-In2O3
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This paper reports on the influence of the sintering temperature and atmosphere and transition-metal doping on the magnetic properties of nanocrystalline and bulk In2O3. Undoped nanocrystalline In2O3 is diamagnetic whatever the sintering temperature and atmosphere. All single-phase transition-metal-doped In2O3 samples are paramagnetic, with a paramagnetic effective moment originating from weakly interacting transition metal ions. No trace of ferromagnetism has been detected even with samples sintered under argon, except extrinsic ferromagnetism for samples with magnetic dopant concentrations exceeding the solubility limit.
- Bérardan, David,Guilmeau, Emmanuel,Pelloquin, Denis
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- Synthesis and characterisation of tetramethylpiperidinyloxide (TEMPO) complexes of group 13 metal hydrides
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Attempts have been made to prepare low oxidation state group 13 hydride complexes by reacting the metal trihydride-Lewis base adducts, [MH 3(quin)] (quin = quinuclidine, M = Al, Ga or In), with reducing or hydrogen abstraction reagents. The 1:
- Jones, Cameron,Rose, Richard P.
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- Tetrakisdiindan(4) mit Indium-Indium-Bindung
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The reaction of In2Br4*2TMEDA with lithium-bis(trimethylsilyl)methyl forms tetrakisindane(4) (1), having an indium-indium bond and precipitating from n-pentane as orange-red crystals.Though the molecular structure of 1 closely r
- Uhl, Werner,Layh, Marcus,Hiller, Wolfgang
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- Room-temperature chemical synthesis of shape-controlled indium nanoparticles
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Shape-controlled metal nanoparticles are of interest because of their wide range of properties that are useful for applications that include optics, electronics, magnetism, and catalysis. Indium metal is an attractive target for nanoparticle synthesis because it is superconducting, plasmonically active, and is a component in low-melting solders and solid-state lubricants. Indium nanoparticles are typically synthesized using harsh physical or chemical techniques, and rigorous shape control is difficult. Here we present a simple and robust kinetically controlled process for synthesizing shape-controlled indium nanoparticles. By controlling the rate of dropwise addition of a solution of NaBH4 in tetraethylene glycol to an alcoholic solution of InCl3 and poly(vinyl pyrrolidone), indium nanoparticles are formed with shapes that include high aspect ratio nanowires and uniform octahedra and truncated octahedra. The zero-dimensional indium nanoparticles exhibit an SPR band centered around 400 nm, and all morphologies are superconducting (Tc = 3.4 K) with higher critical fields than bulk indium. Copyright
- Chou, Nam Hawn,Ke, Xianglin,Schiffer, Peter,Schaak, Raymond E.
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- Influence of citrate ions as complexing agent for electrodeposition of CuInSe2 thin films
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The preparation of CuInSe2 thin films by electrodeposition is studied. The effect of sodium citrate (Na3C6H5O7) as complexing agent on the electrodeposition of pure copper, indium, selenium and of their ternary alloy is emphasized. Cathodic shifts of the copper and selenium electrodeposition potentials with increasing citrate concentration are observed. On the contrary, the presence of citrate in the electrolyte does not change the indium electrodeposition potential but improves its crystallinity. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction. The formation of CuInSe2 films with a chalcopyrite structure and good stoichiometry is observed. WILEY-VCH Verlag Berlin GmbH.
- Chraibi,Fahoume,Ennaoui,Delplancke
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- The crystal structure of cis- and trans-N-iso-propylamidodimethyl indium, [(CH3)2In-N(H)iC3H7] 2
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According to the X-ray structure determination [(CH3)2In-N(H)iC3H7] 2 (prepared from InMe3 (Me = CH3) and H2NiPr (iPr = CH(CH3)2) crystallizes in the monoclinic space group P21/n with 3 dimeric trans as well as 3 dimeric cis isomers per unit cell. The centrosymmetric form has a planar In2N2 core with In-N bonds of 222.1(4) and 222.9(5)pm, respectively, the skeleton of the cis isomer with In-N bonds of 221.4(4)pm is slightly folded (13.7°). Some 1H, 13C NMR, IR, and Raman data are reported.
- Cordeddu,Hausen,Weidlein
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- Non-thermal reduction of indium oxide and indium tin oxide by mechanochemical method
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A non-thermal process for reducing indium(III) oxide (In2O3) and/or indium tin oxide (ITO) into indium-metal by milling with lithium nitride (Li3N) under (NH3) or nitrogen (N2) gas environment is prop
- Kano, Junya,Kobayashi, Eiko,Tongamp, William,Miyagi, Shoko,Saito, Fumio
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- Superconductivity in the hexagonal-layered nanolaminates Ti2InC compound
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The hexagonal-layered Ti2InC compound is a member of the large family of lamellar materials that crystallize in the hexagonal structure with space group P 63 / mmc, which are isomorphs with the Cr2AlC compound, and known as H-phase. In this work the Ti2InC phase is investigated by X-ray diffraction, magnetization and resistivity measurements. Susceptibility and resistivity measurements display superconducting critical temperature close to 3.1 K. In spite of the great number of compounds which belong to this family, superconductivity has been reported only for four cases: Mo2GaC, Nb2SC, Nb2AsC and Nb2SnC. This work supports the existence of a new class of superconducting materials that crystallize in an H-phase.
- Bortolozo,Sant'Anna,dos Santos,Machado
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- In3I2[C(SiMe3)3]3 : Synthesis of a diiodotrialkyltriindane(5) containing two in-in single bonds
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Treatment of the tetrahedral indium(I) cluster compound In4[C(SiMe3)3]4 (1) with a mixture of All3 and I2 afforded the yellow diiodotriindium compound In3I2[C(SiMe3)3]3 (2) in 73% yield. 1 contains a chain of three indium atoms connected by In-In single bonds. A trigonal bipyramidal structure resulted in the solid state by two iodide bridges between the terminal indium atoms.
- Uhl, Werner,Melle, Sandra,Geiseler, Gertraud,Harms, Klaus
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- Epitaxial character of in growth at annealed ZnO/InP(110) interfaces
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ZnO/InP(110) samples prepared as light emission sources are explored by X-ray diffraction to characterize structural changes induced by annealing in the range of 450 to 700°C for 3 min. Metallic indium is created between the ZnO thin film and the InP substrate as a result of annealing. Pole figure measurements reveal that the most densely populated planes In{101} and InP{111} are oriented parallel and a common symmetry plane exists being perpendicular to the above-mentioned planes and simultaneously parallel to an InP{110} and an In{100} plane. Moreover, the two types of InP{111} interface (In or P) are not found equally good for In growth.
- Keckes,Ortner,Cerven,Jakabovic,Kovac,Srnanek,Novotny,Tvarozek
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- Directed growth of single-crystal indium wires
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Tailored electric fields were used to direct the dendritic growth of crystalline indium wires between lithographic electrodes immersed in solutions of indium acetate. Determination of the conditions that suppress sidebranching on these structures has enabled the fabrication of arbitrarily long needle-shaped wires with diameters as small as 370 nm. Electron diffraction studies indicate that these wires are crystalline indium, that the unbranched wire segments are single-crystal domains, and that the predominant growth direction is near 〈110〉. This work constitutes a critical step towards the use of simply prepared aqueous mixtures as a convenient means of controlling the composition of submicron, crystalline wires.
- Talukdar, Ishan,Ozturk, Birol,Flanders, Bret N.,Mishima, Tetsuya D.
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- Dialkylindium derivatives of unsaturated nitrogen heterocycles - preparation, spectroscopic properties and the use in MOVPE
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A series of dialkylindium azolides of the type R2In(NR') (with R = Me and Et) have been synthesized by the reaction of InR3 with various N-heterocycles (pyrrole, pyrazoles, imidazole and 1,2,4-triazole) or by treatment of R2InCl with a lithiated azolide, Li(NR') in an inert solvent.The compounds have been characterized by NMR (1H, 13C) and vibrational (IR and Raman) spectroscopy, and their mass spectra are discussed.The pyrazole derivatives are dimeric in solution and in the gas phase, whereas, as indicated by the mass spectral data, the triazole compound is trimericin the gas phase, and the imidazole derivative seems to be polymeric.The spectroscopic data suggest that the dimethylindium-pyrrole compound has an unusual structure, which is not comparable with those of the other organoindium azolides.Dimethylindiumpyrazole was used in metalorganic vapor phase epitaxy (MOVPE) experiments to grow InP layers.
- Locke, K.,Weidlein, J.,Scholz, F.,Bouanah, N.,Brianese, N.,et al.
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- Electrodeposition of selenium, indium and copper in an air- and water-stable ionic liquid at variable temperatures
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The electrochemical behaviour of Au(1 1 1) and highly oriented pyrolytic graphite (HOPG) substrates in the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([BMP]Tf2N) was investigated using in situ scanning tunneling microscopy (STM). Furthermore, the electrodeposition of Se, In and Cu in the same ionic liquid was investigated. The high thermal stability as well as the large electrochemical window of this ionic liquid compared with aqueous electrolytes allow the direct electrodeposition of grey selenium, indium and copper at variable temperatures, as the first step in making CIS solar cells electrochemically, in a one pot reaction. The results show that grey selenium can be obtained at temperatures ≥100 °C. XRD patterns of the electrodeposit obtained at 100 °C show the characteristic peaks of crystalline grey selenium. Nanocrystalline indium with grain sizes between 100 and 200 nm was formed in the employed ionic liquid, containing 0.1 M InCl3, at room temperature. It was also found that copper(I) species can be introduced into the ionic liquid [BMP]Tf2N by anodic dissolution of a copper electrode and nanocrystalline copper with an average crystallite size of about 50 nm was obtained without additives in the resulting electrolyte.
- Zein El Abedin,Saad,Farag,Borisenko,Liu,Endres
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- Homogeneous electrochemical deposition of in on a Cu-covered Mo substrate for fabrication of efficient solar cells with a CuInS2 photoabsorber
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Electrochemical deposition of indium (In) on a copper-covered molybdenum-coated glass substrate from several acidic InCl3 solutions was studied for fabrication of CuInS2-based solar cells. When In was deposited using a simple acidic InCl3 solution at -0.80 V (vs. Ag/AgCl), island-shaped growth was observed, whereas a homogeneous In film was obtained from InCl3 solution containing citric acid and sodium citrate at -0.98 V (vs. Ag/AgCl). Electrochemical and structural analyses revealed that the citric acid additive had a function for smoothing the surface of the In deposit. The mixing with sodium citrate induced appreciable inhibition of H2 evolution during the In deposition, leading to high current efficiency of >90%. The CuInS2 film derived from the homogeneous In had a uniform thickness with a smooth surface, while the CuInS2 film obtained from the island-shaped In deposit showed a large variation in thickness with recessed areas. The CuInS2 film derived from the homogeneous In was showed better photoelectrochemical response than that of the film fabricated from the island-shaped In. As expected from these differences, the solar cell with an Al:ZnO/CdS/CuInS2/Mo structure derived from the homogeneous In film showed the best conversion efficiency of 7.8% with relatively high reproducibility.
- Lee, Sun Min,Ikeda, Shigeru,Otsuka, Yasunari,Septina, Wilman,Harada, Takashi,Matsumura, Michio
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- Preparation of [Et2InSb(SiMe3)2]3; A trimeric single-source precursor to indium antimonide
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The 1:1 mole ratio reaction of Et2InCl with Sb(SiMe3)3 results in the formation of [Et2InSb(SiMe3)2]3 (1), a trimeric compound containing a six-membered indium-antimony ring. An X-ray crystal structure has been obtained for the compound substantiating the trimeric nature of 1 in the solid state, however variable-temperature 1H-NMR studies show a dimer/trimer equilibrium for this species in solution. Preliminary thermolysis studies demonstrate its utility in the formation of nanocrystalline InSb.
- Foos, Edward E.,Jouet, Richard J.,Wells, Richard L.,White, Peter S.
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- Kinetic analysis of the thermal decomposition of dialkyldithio-carbamates chelates of indium(III)
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Kinetic analysis of the thermal decomposition of dialkyldithiocrbamtes chelates of indium(III) was carried out using isothermal and non-isothermal thermogravimetry. The complexes decomposed in the liquid phase with the exception of two compounds after mel
- Souza,Oliveira,Santos,Conceicao,Nunes,Machado
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Read Online
- Indium and indium-oxide nanoparticle or nanorod formation within functionalised ordered mesoporous silica
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Organized mesoporous silica materials containing phosphonate groups have been used for controlling the growth of indium(0) nanoparticles or nanorods, which are converted to indium-oxide without modification of their size and shape.
- Guari, Yannick,Soulantica, Katerina,Philippot, Karine,Thieuleux, Chloe,Mehdi, Ahmad,Reye, Catherine,Chaudret, Bruno,Corriu, Robert J. P.
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Read Online
- Selective and Direct Formation of Ethene from CO and H2 over In2O3-Y2O3, -La2O3, and -CeO2 Catalysts
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Ethene is slectively formed from CO and H2 over In2O3-containing oxide catalysts such as In2O3-Y2O3, -La2O3, and -CeO2 at 673 K and 67 kPa with the highest selectivity of 43percent for hydrocarbons.
- Arai, Toru,Maruya, Ken-ichi,Domen, Kazunari,Onishi, Takaharu
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Read Online
- The unusual reactions of indium(I) trifluoromethanesulfonate with some first row metallocenes and the structure of indium(II) cyclopentadienide
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The soluble reagent indium(I) trifluoromethanesulfonate, InOTf, does not appear to react or interact with ferrocene (Cp2Fe, Cp = C 5H5) whereas cobaltocene reacts with InOTf to produce [Cp2Co]+[OTf]- and indium metal. Unexpectedly, the reaction of InOTf with manganocene results in the formation of the unprecedented salt [In(μ2,η5-Cp)In] +[Cp3In(μ2,η1-Cp)InCp 3]-: a form of Cp2In that is characterized by X-ray crystallography. Similarly, the reaction of InOTf with [Cp2Fe]+[PF6]- produces Cp 2Fe and In4OTf6 in addition to other products. The unusual structural features and the formation of the new indium-containing products are rationalized.
- Andrews, Christopher G.,Macdonald, Charles L.B.
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Read Online
- Synthesis of Heterobimetallic Group 13 Compounds via Oxidative Addition Reaction of Gallanediyl LGa and InEt3
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Equimolar amounts of LGa (L = [(2,6-i-Pr2-C6H3)NC(Me)]2CH) and InEt3 were found to react with insertion into the In-carbon bond and formation of LGa(Et)InEt2 (1), while in the presence of the N-heterocyclic carbene It-Bu [C(Nt-Bu2CH)2], the base-stabilized compound LGa(Et)Et2In←It-Bu (2) was formed, which shows an abnormal binding mode of the NHC group. In addition, the reaction of InEt3 with two equivalents of LGa occurred with double insertion and formation of [LGa(Et)]2InEt (3). 1-3 were characterized by heteronuclear NMR (1H, 13C) and IR spectroscopy, their solid-state structures were determined by single-crystal X-ray analyses, and their thermal stability was investigated by in situ NMR spectroscopy. (Chemical Equation Presented).
- Ganesamoorthy, Chelladurai,Bl?ser, Dieter,W?lper, Christoph,Schulz, Stephan
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p. 2991 - 2996
(2015/06/30)
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- Synthesis of colloidal InSb nanocrystals via in situ activation of InCl3
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Indium antimonide (InSb), a narrow band gap III-V semiconductor is a promising infrared-active material for various optoelectronic applications. Synthetic challenge of colloidal InSb nanocrystals (NCs) lies in the limited choice of precursors. Only a few successful synthetic schemes involving highly toxic stibine (SbH3) or air- and moisture-sensitive metal silylamides (In[N(Si-(Me)3)2]3 or Sb[N(Si-(Me)3)2]3) as the precursor have been reported. We found that commercially available precursors InCl3 and Sb[NMe2]3 directly form highly crystalline colloidal InSb nanocrystals in the presence of a base such as LiN(SiMe3)2 or nBuLi. The mean size of the particles can be controlled by simply changing the activating base. This approach offers a one-pot synthesis of InSb NCs from readily available chemicals without the use of complex organometallic precursors.
- Tamang, Sudarsan,Kim, Kyungnam,Choi, Hyekyoung,Kim, Youngsik,Jeong, Sohee
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p. 16923 - 16928
(2015/10/05)
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- Salt-Free Reduction of Nonprecious Transition-Metal Compounds: Generation of Amorphous Ni Nanoparticles for Catalytic C-C Bond Formation
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A salt-free procedure for the generation of a wide variety of metal(0) particles, including Fe, Co, Ni, and Cu, was achieved using 2,3,5,6-tetramethyl-1,4-bis(trimethylsilyl)-1,4-diaza-2,5-cyclohexadiene (1), which reduced the corresponding metal precursors under mild conditions. Notably, Ni particles formed in situ from the treatment of Ni(acac)2 (acac=acetylacetonate) with 1 in toluene exhibited significant catalytic activity for reductive C-C bond-forming reactions of aryl halides in the presence of excess amounts of 1. By examination of high-magnification transmission electron microscopy images and electron diffraction patterns, we concluded that amorphous Ni nanoparticles (Ni aNPs) were essential for the high catalytic activity.
- Yurino, Taiga,Ueda, Yohei,Shimizu, Yoshiki,Tanaka, Shinji,Nishiyama, Haruka,Tsurugi, Hayato,Sato, Kazuhiko,Mashima, Kazushi
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supporting information
p. 14437 - 14441
(2016/01/25)
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- Synthetic route to metal nitrides: High-pressure solid-state metathesis reaction
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We report a general synthetic route to well-crystallized metal nitrides through a high-pressure solid-state metathesis reaction (HPSSM) between boron nitride (BN) and ternary metal oxide AxMyOz (A = alkaline or alkaline-earth metal and M = main group or transition metal). On the basis of the synthetic metal nitrides (Fe3N, Re3N, VN, GaN, CrN, and WxN) and elemental products (graphite, rhenium, indium, and cobalt metals), the HPSSM reaction has been systematically investigated with regard to its general chemical equation, reaction scheme, and characteristics, and its thermodynamic considerations have been explored by density functional theory (DFT) calculations. Our results indicate that pressure plays an important role in the synthesis, which involves an ion-exchange process between boron and the metal ion, opening a new pathway for material synthesis.
- Lei, Li,Yin, Wenwen,Jiang, Xiaodong,Lin, Sen,He, Duanwei
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p. 13356 - 13362
(2014/01/06)
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- Group 13 β-ketoiminate compounds: Gallium hydride derivatives as molecular precursors to thin films of Ga2O3
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Bis(β-ketoimine) ligands, [R{N(H)C(Me)-CHC(Me)=O}2] (L 1H2, R = (CH2)2; L2H 2, R = (CH2)3), linked by ethylene (L 1) and propylene (L2) bridges have been used to form aluminum, gallium, and indium chloride complexes [Al(L1)Cl] (3), [Ga(Ln)Cl] (4, n = 1; 6, n = 2) and [In(Ln)Cl] (5, n = 1; 7, n = 2). Ligand L1 has also been used to form a gallium hydride derivative [Ga(L1)H] (8), but indium analogues could not be made. β-ketoimine ligands, [Me2N(CH2)3N(H) C(R′)-CHC(R′)=O] (L3H, R′ = Me; L4H, R′ = Ph), with a donor-functionalized Lewis base have also been synthesized and used to form gallium and indium alkyl complexes, [Ga(L 3)Me2] (9) and [In(L3)Me2] (10), which were isolated as oils. The related gallium hydride complexes, [Ga(L n)H2] (11, n = 3; 12, n = 4), were also prepared, but again no indium hydride species could be made. The complexes were characterized mainly by NMR spectroscopy, mass spectrometry, and single crystal X-ray diffraction. The β-ketoiminate gallium hydride compounds (8 and 11) have been used as single-source precursors for the deposition of Ga2O 3 by aerosol-assisted (AA)CVD with toluene as the solvent. The quality of the films varied according to the precursor used, with the complex [Ga(L1)H] (8) giving by far the best quality films. Although the films were amorphous as deposited, they could be annealed at 1000 °C to form crystalline Ga2O3. The films were analyzed by powder XRD, SEM, and EDX.
- Pugh, David,Marchand, Peter,Parkin, Ivan P.,Carmalt, Claire J.
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p. 6385 - 6395
(2012/08/08)
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- Application of TA-MS combined with PulseTA for characterization of materials
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The thermal behavior of the anticancer drug-irinotecan was measured by Thermogravimetry-Differential thermal analysis (TG-DTA) to explore the application of TG-DTA in nanomedicine firstly. The TG-DTA result showed that the irinotecan was oxidized completely before 700 °C. When irinotecan was loaded onto nanosized mesoporous silica spheres, the loading capacity for irinotecan measured by TG-DTA was about 9.11percent in the irinotecan/mesoporous SiO2 composite, similar to the typical UV-Vis spectra results (10.5percent), which showed that TG-DTA characterization provided an alternative method to determine the drug loading amount on inorganic carriers. Secondly, Thermogravimetry-Differential scanning calorimetry-Mass Spectrometry coupling techniques (TG-DSC-MS) were used to characterize the hydrogen adsorption temperature and capacity of TiCr1.2 (V-Fe)0.6 alloy. The MS result showed that the released region of hydrogen was 250-500 °C, which was consistent with the TG-DSC results. Lastly, TA-MS combined with pulse thermal analysis (PulseTA) were used for a simultaneous characterizing study in the changes of mass, determination and quantitative calibration of the evolved nitrogen formed during the thermal decomposition of the InN powder. The results showed that relative error of this method between measured value and theoretical value was 2.67percent for the quantitative calibration of evolved N2. It shows that TA-MS combined with PulseTA techniques offer a good tool for the quantification of the evolved nitrogen in the InN powder.
- Huimei, Yu,Lingjun, Qi,Qinghong, Zhang,Danyu, Jiang,Changwei, Lu
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- Influence of Ni substitution on redox properties of In2(1-x) Ni2xTiO5-δ oxides
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The thermal behavior of mixed metal oxides with nominal compositions of In2(1-x)Ni2xTiO5-δ where 0.0 ≤ x ≤ 0.2, were investigated by recording their temperature programmed reduction (TPR). The samples were synthesized by ceramic route and analyzed for phase composition using powder X-ray diffraction. The TPR profile of pristine In 2TiO5 indicated the reduction of In3+, which takes place predominantly over the other species Ti4+ in In 2TiO5 sample. Ni substitution at In3+ site induced ease in reducibility as indicated by lowering of onset reduction temperature and Tmax. Moreover, it also facilitated the reduction of otherwise non reducible cation, Ti4+. Ni metal initially formed by reduction, dissociates and activates hydrogen which then reacts and reduces the oxide (even Ti4+), a case of hydrogen spillover. The metallic Ni forms an alloy Ti2Ni with reduced Ti metal and δIn 3Ni2 alloy with the reduced In metal as evident by XRD and XPS results of the reduced residue of 20% Ni doped (In1.6Ni 0.4TiO5-δ) sample. Due to formation of new alloy phases of δIn3Ni2 and Ti2Ni, the rate of hydrogen adsorption diminishes which slows down further hydrogen activation and consequent further Ti4+ reduction.
- Banerjee,Pai,Jagannath,Bharadwaj
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- White phosphorus and metal nanoparticles: A versatile route to metal phosphide nanoparticles
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P4 reaction with metal NPs (In, Pb, Zn) provides an easy access to the corresponding metal phosphide NPs in a soft and stoichiometric reaction. Size-influence on the reactivity is investigated in the case of indium. The Royal Society of Chemistry 2010.
- Carenco, Sophie,Demange, Matthieu,Shi, Jing,Boissiere, Cedric,Sanchez, Clement,Le Floch, Pascal,Mezailles, Nicolas
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p. 5578 - 5580
(2010/08/22)
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- Chemical synthesis of Cu(In) metal inks to prepare CuInS2 thin films and solar cells
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We report a chemical method to prepare Cu/In inks or Cu-In inks, from which CuInS2 films are formed. Cu, In and Cu-In nanoparticles are initially synthesized by a polyol method, and then dispersed in solvents to form inks. Metal films are subsequently obtained by drop-casting the Cu inks and In inks in sequence or Cu-In inks directly. The sulfurization of the metal films is carried out in a tube with high sulfur vapors. The obtained CuInS2 films are compact with large grains and pure phases. The band gap of the CuInS2 film is determined to be ~1.45 eV, which is near the optimal band gap of the solar cell materials. Tentative CuInS2 solar cell with an efficiency of 0.7% is fabricated.
- Chen, Guanbi,Wang, Lei,Sheng, Xia,Liu, Hongjuan,Pi, Xiaodong,Yang, Deren
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p. 317 - 321
(2011/01/06)
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- Solution synthesis and characterization of indium-zinc formate precursors for transparent conducting oxides
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A series of In-Zn formate mixtures were investigated as potential precursors to amorphous In-Zn-oxide (IZO) for transparent conducting oxide (TCO) applications. These mixtures were prepared by neutralization from formic acid and characterized by elemental analysis, IR spectroscopy, powder X-ray diffraction, and thermogravimetry-differential scanning calorimetry (TG-DSC) measurements. Thermal analysis revealed that a mixture of In and Zn formates reduced the overall decomposition temperature compared to the individual constituents and that OH-substitution enhanced the effect. In terms of precursor feasibility, it was demonstrated that the decomposition products of In-Zn formate could be directed toward oxidation or reduction by controlling the decomposition atmosphere or with solution acid additives. For TCO applications, amorphous IZO films were prepared by ultrasonic spray deposition from In-Zn formate solutions with annealing at 300-400 °C.
- Pasquarelli, Robert M.,Curtis, Calvin J.,Miedaner, Alexander,Van Hest, Maikel F.A.M.,OHayre, Ryan P.,Ginley, David S.
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p. 5424 - 5431
(2010/08/05)
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- Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
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Catalyst-free InP nanowires were grown on Si (1 0 0) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a d
- Yu, Shuzhen,Miao, Guoqing,Jin, Yixin,Zhang, Tiemin,Song, Hang,Jiang, Hong,Li, Zhiming,Li, Dabing,Sun, Xiaojuan
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p. 832 - 834
(2010/01/16)
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- New double formates Na3M(HCOO)6 (M = Ga, In) with diamond-like metal framework: Synthesis, structure and coordination modes
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Two new double formates, Na3M(HCOO)6 (M = Ga, In), have been synthesized by using quasi-solvothermal method. Both compounds are isostructural, crystallizing in orthorhombic space group Pccn, with lattice parameters a = 14.6279(5) ?,
- Su, Jie,Wang, Yingxia,Li, Weihong,Yang, Sihai,Li, Guobao,Liao, Fuhui,Lin, Jianhua
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- Room temperature synthesis of In2S3 micro- and nanorod textured thin films
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Thin films of indium sulfide (In2S3) micro- and nanorods were successfully prepared by sulfurization of electrodeposited metal indium layers. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and UV-vis spectroscopy. From XRD and TEM observations it was concluded that the In2S3 nanorods and microrods have ~50 nm and ~0.5 μm diameter, respectively. A plausible top-growth mechanism was proposed for the formation of the nanorods in which the hydroxide layer was found to play an important role. The micro- and nanorods showed optical bandgap of ~2.2 and ~2.54 eV, respectively. This facile and cost effective method may be extended to fabricate other metal chalcogenide nanostructures on solid substrates.
- Datta, Anuja,Panda, Subhendu K.,Gorai, Soma,Ganguli, Dibyendu,Chaudhuri, Subhadra
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p. 983 - 989
(2008/10/09)
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- Synthesis and structural characterisation of a soluble, metastable indium(I) halide complex, [InBr(tmeda)]
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The first example of an indium(I) halide complex, [InBr(tmeda)], has been prepared by the reversible dissolution of InBr in a tmeda-toluene mixture. The structural characterisation of the metastable compound shows it to be monomeric with weak In...In interactions in the solid state. In solution, it decomposes to either InBr or [In2Br4(tmeda)2]. The Royal Society of Chemistry 2008.
- Green, Shaun P.,Jones, Cameron,Stasch, Andreas
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p. 6285 - 6287
(2009/04/13)
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- Catalytic use of indium(0) for carbon-carbon bond transformations in water: General catalytic allylations of ketones with allylboronates
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We have discovered the unprecedented catalytic use of In(0) for catalytic C-C bond transformations. Remarkably, these general catalytic allylations of ketones proceeded smoothly in water as a sole solvent under mild conditions, and water proved to be essential for these reactions. Both the displayed substrate scope and the functional group tolerance were excellent. Importantly, the In metal catalyst could be easily recovered and reused without loss of catalytic activity. Moreover, when an α-substituted allylboronate was used, an unusual constitutional selectivity was observed providing exclusively the formal α-adduct. Additionally, the resulting tertiary homoallylic alcohols were obtained with exceptionally high diastereoselectivities. The applicability of this concept to asymmetric catalysis in water by using In(0) combined with a chiral bis(oxazoline) ligand was demonstrated as well. Copyright
- Schneider, Uwe,Ueno, Masaharu,Kobayashi, Shu
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p. 13824 - 13825
(2009/02/07)
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- Organoiron compounds derived from the indium 'carbene analogues', [In{N(Ar)C(Me)}2CH] (Ar = dipp = 2,6-iPr2C 6H3; = Mes = 2,4,6-Me3C6H 2)
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Oxidative insertion of the In(i) 'carbene analogues', [In{N(Dipp)C(Me)} 2CH] (Ar = Dipp = 2,6-iPr2C6H 3; Ar = Mes = 2,4,6-Me3C6H2) into the Fe-I bond of [CpFe(CO)2I] occurred cleanly and under mild conditions to yield the In(iii) compounds [CH{(CH3) 2CN-2,6-iPr2C6H3} 2In(I)FeCp(CO)2] and [CH{(CH3) 2CN-2,4,6-Me3C6H3} 2In(I)FeCp(CO)2], which have been fully characterised in solution and the solid state. Attempts to abstract the iodide anion from [CH{(CH3)2CN-2,6-iPr2C 6H3}2In(I)FeCp(CO)2] to form cationic species containing a coordinated indium diyl were unsuccessful and resulted in a complex mixture of products from which two ionic species were isolated. Neither cation was found to contain indium by X-ray crystallographic analysis. These observations were indicative of ill-defined decomposition pathways as have been noted by previous workers. A further attempt to form a cationic iron species containing a coordinated [In{N(Dipp)C(Me)}2CH] fragment resulted in oxidation of the iron centre from Fe(ii) to Fe(iii), with deposition of indium metal, and the isolation of a cationic Fe(iii) β-diketiminate complex. The Royal Society of Chemistry.
- Hill, Michael S.,Hitchcock, Peter B.,Pongtavornpinyo, Ruti
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p. 2854 - 2860
(2008/09/21)
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- Transparent conducting oxide thin films and related devices
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Transparent conducting oxide thin films having a reduced indium content and/or an increased tin content are provided. In addition, processes for producing the same, precursors for producing the same, and transparent electroconductive substrate for display panels and organic electroluminescence devices, both including the transparent conducting oxide thin films, are provided.
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- Spontaneous growth of uniformly distributed in nanodots and InI3 nanowires on InP induced by a focused ion beam
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We show the growth of hemispherical In nanodots due to differential sputtering by 30 keV gallium (Ga+) ions and of InI3 nanodots and nanowires due to chemical reactions with iodine on the surface of focused ion beam-irradiated areas on a (100)InP substrate. Growth occurs exclusively on previously FIB-fabricated nucleation-sites in the form of craters and trenches. Surface topography and the native oxide on InP are identified as the factors determining the area of growth. Arbitrary 2D patterns can be generated with good control of localization and dimension of the nanostructures. Limitations of size and surface density of the nanodots and nanowires are discussed.
- Callegari, Victor,Nellen, Philipp M.
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p. 1665 - 1671
(2008/10/09)
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- Redox reaction and gas phase precipitation in the system In/Mn/O
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The oxidation of manganese metal with In2O3 occurs at approximately 973 K in evacuated silica ampoules. Thereby, the vapour transport species In2O(g) is being formed, which decomposes to indium metal and In2O3 at lower temperatures. Thermodynamic data as well as a description of the transport mechanism is given.
- Moeller, Angela,Schmidt, Peer,Fastje, Oliver
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p. 1654 - 1658
(2008/10/09)
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- New series of indium formates: Hydrothermal synthesis, structure and coordination modes
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Three new indium(III) compounds, In(HCOO)3 (1), In 2(HCOO)5(OH) (2), and In(HCOO)2(OH) (3), were synthesized under hydrothermal conditions and characterized by single crystal and powder X-ray diffraction experiments, as well as by IR spectroscopy, elemental analysis, and coupled TG-DSC-MS measurement. All of these compounds adopt 3D framework structures consisting of InO6 octahedra and the 2.11 binding modes of formate with the (syn, syn-; syn, anti-; anti, anti-) configurations. The structural investigation of these indium formates reveals that the gradual introduction of the hydroxyl groups into the structures induces the polymerization of the InO6 octahedra, that is, InO6 is isolated in 1, becomes dimeric in 2, and finally forms 1D chains in 3. In addition, a simple formula that may be used for estimating the overall coordination number of the formate in Ma(HCOO)bL c is proposed.
- Su, Jie,Wang, Yingxia,Yang, Sihai,Li, Guobao,Liao, Fuhui,Lin, Jianhua
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p. 8403 - 8409
(2008/10/09)
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- InN nanoflowers grown by metal organic chemical vapor deposition
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Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern.
- Kang, Ting-Ting,Liu, Xianglin,Zhang, Ri Q.,Hu, Wei G.,Cong, Guangwei,Zhao, Feng-Ai,Zhu, Qinsheng
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- Thermal behavior of nitrided TiO2/In2O3 by TG-DSC-MS combined with PulseTA
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TiO2/InN (In/(Ti + In) = 6.5:100 mol) was prepared by nitridation of TiO2/In2O3 by NH3 at 580 °C for 8 h. Only the anatase TiO2 phase was detected in the XRD measurements. The highly dispersed InN clusters on the surface of anatase TiO2 nanocrystals were beyond the detection limit of XRD. In order to confirm the existence of InN in the products of nitridation, thermogravimetry-differential scanning calorimetry-mass spectrometry (TG-DSC-MS) coupling techniques were used for a simultaneous characterizing study of the changes of mass, enthalpy and determination of the evolved gases during the thermal decomposition of the InN and the nitrided TiO2/In 2O3 samples. Moreover, pulse thermal analysis (PulseTA) was combined with TG-DSC-MS for the quantitative calibration of the evolved nitrogen formed during the thermal decomposition of the InN and the nitrided TiO2/In2O3. The applied technique enabled identification and quantification of the InN in the products of the nitridation of TiO2/In2O3.
- Yu, Hui-Mei,Zhang, Qing-Hong,Qi, Ling-Jun,Lu, Chang-Wei,Xi, Tong-Geng,Luo, Lan
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p. 195 - 199
(2008/10/09)
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- Chemical interaction of Cu-In, Cu-Sn, and Cu-Bi solid solutions with liquid Ga-In and Ga-Sn eutectics
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The reactions of copper-based Cu-In, Cu-Sn, and Cu-Bi solid solutions with liquid Ga-In and Ga-Sn eutectics have been studied in situ by synchrotron x-ray diffraction. The results indicate that the dynamics of the process and the phase composition, grain
- Ancharov,Grigorieva,Tsybulya,Boldyrev
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p. 1058 - 1064
(2008/10/09)
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- Charge separation in heterostructures of InP nanocrystals with metal particles
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The optical and electron paramagnetic resonance (EPR) properties of InP nanocrystals, in which metallic gold or indium is present as an incorporated part of the nanocrystals, have been studied. A study of Au/InP quantum rods supports different carrier localization regimes compared to metal-free quantum rods, including the charge-separated state for which the electron and hole are located in different parts of the heterostructure. They also show that elongated semiconductors that grow on metallic catalysts have electronic properties that are different from those of pure semiconductor nanocrystals of the same shape. We have also developed a simple method for growing melted indium particles on the surface of colloidal spherical InP nanocrystals, and in these In/InP nanocrystals the emission is completely quenched while the absorption spectrum moves to red due to the strong mixing of the semiconductor and metal electronic states. ? 2005 American Chemical Society.
- Dimitrijevicì?, Nada M.,Rajh, Tijana,Ahrenkiel, S. Phillip,Nedeljkovicì?, Jovan M.,Micì?icì?, Olga I.,Nozik, Arthur J.
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p. 18243 - 18249
(2008/10/09)
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- Kinetics and mechanism of free-surface vaporization of groups IIA, IIIA and IVA nitrides analyzed thermogravimetrically by the third-law method
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The purpose of this work was to re-measure the enthalpy ΔrHT° of free-surface vaporization of hexagonal (h) Mg3N2, AlN, GaN, InN and Si3N4 and cubic (c) BN by the third-law method and by comparing them with the enthalpies calculated from thermodynamics to deduce the composition of primary products (bN and cN2) for the generalized decomposition reaction: MaNb+2c ? aM + bN + cN2. In addition to these nitrides, the literature data were used for the investigation of vaporization of h-Be3N2 and c-AlN and c-GaN. The relative standard deviation in determination of ΔrHT° values is ≤1% and in determination of b/(b + 2c) ratio is better than 2-4%. As a result of this study, some important features in the decomposition mechanism of different nitrides were revealed: the identity in composition of primary products for h-Be3N2 and h-Mg 3N2 (b/(b + 2c) = 0.75) and h-AlN and h-GaN (b/(b + 2c) = 0.42) and the release of only molecular nitrogen in cases of c-BN, c-AlN and c-GaN (b/(b + 2c) = 0). The last feature that was observed earlier for cubic metal oxides [B.V. L'vov, V.L. Ugolkov, F.F. Grekov, Kinetics and mechanism of free-surface vaporization of zinc, cadmium and mercury oxides analyzed thermogravimetrically by the third-law method, Thermochim. Acta 411 (2004) 187-193.] supports the effect of crystal symmetry on the decomposition mechanism. The distance between the closest atoms (NN) in a crystalline lattice has a secondary or no effect on the composition of primary products. These features might be useful for the development/improving of appropriate technologies (including nano-technologies) for production of solid materials by the chemical vapour deposition.
- L'vov, Boris V.,Ugolkov, Valery L.
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- Indium nitride from indium iodide at low temperatures: Synthesis and their optical properties
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In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of 3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV. The Royal Society of Chemistry and the Centre National de la Recherche Scientifique 2005.
- Wu, Changzheng,Li, Tanwei,Lei, Lanyu,Hu, Shuangquan,Liu, Yi,Xie, Yi
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p. 1610 - 1615
(2007/10/03)
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- Halide abstraction as a route to cationic transition-metal complexes containing two-coordinate gallium and indium ligand systems
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Halide abstraction chemistry offers a viable synthetic route to the cationic two-coordinate complexes [{Cp*Fe(CO)2} 2(μ-E)]+ (7, E = Ga; 8, E = In) featuring linear bridging gallium or indium atoms. Structural, spectroscopic, and computational studies undertaken on 7 are consistent with appreciable Fe-Ga π-bonding character; in contrast, the indium-bridged complex 8 is shown to feature a much smaller π component to the metal-ligand interaction. Analogous reactions utilizing the supermesityl-substituted gallyl or indyl precursors of the type (η5-C5R5)Fe(CO)2E(Mes*)X, on the other hand, lead to the synthesis of halide-bridged species of the type [{(η5-C5R5)Fe(CO)2E(Mes*)} 2(μ-X)]+, presumably by trapping of the highly electrophilic putative cationic diyl complex [(η5-C 5R5)Fe(CO)2E(Mes*)]+.
- Bunn, Natalie R.,Aldridge, Simon,Kays, Deborah L.,Coombs, Natalie D.,Rossin, Andrea,Willock, David J.,Day, Joanna K.,Jones, Cameron,Ooi, Li-Ling
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p. 5891 - 5900
(2008/10/09)
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- Route to GaN and VN assisted by carbothermal reduction process
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A route to prepare nitrides, such as GaN, VN, and other nitrides, is reported. The reaction pathway involves a two-step process by using the as-synthesized a-C3N3.69 as precursor. The route is so potent that a series of nitrides can be directly synthesized from their oxides at moderate temperatures. A striking feature of this method lies in that a-C3N3.69 is found to play double roles as both carbonizing and nitridizing agent in these reactions. These results will greatly deepen our understandings of the mechanism for solid-state metathesis reactions. Copyright
- Zhao, Huaizhou,Lei, Ming,Yang, Xin'an,Jian, Jikang,Chen, Xiaolong
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p. 15722 - 15723
(2007/10/03)
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- Controlled decomposition of an indium trihydride adduct: Synthesis and characterization of the first mixed-oxidation-state indium sub-halide complex anion, [In5Br8(quinuclidine)4]-
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The first example of a compound containing a mixed-oxidation-state indium sub-halide complex anion, [In5Br8(quinuclidine) 4]-, has been accessed by the controlled decomposition of an indium trihydride adduct, [InH3(quinuclidine)], in the presence of LiBr. An intermediate in this reaction, [InH2Br(quinuclidine) 2], has been isolated and suggests that its mechanism involves hydride-bromide exchange, reductive dehydrogenation, and disproportionation processes.
- Cole, Marcus L.,Jones, Cameron,Kloth, Marc
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p. 4909 - 4911
(2008/10/09)
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