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ChemComm
DOI: 10.1039/C7CC08237A
COMMUNICATION
Journal Name
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31, 13886; (b) C.-H. Lee, Y.-Y. Lai, F.-Y. Cao, J.-Y. Hsu, Z.-
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Fig. 6 TEM images of PTB7-Th:FRd blend films prepared under different experimental
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conditions – a) ‘as cast’ without any additive , b) ‘thermally annealed’ (w/o additive), c)
thermally annealed’ (DIO additive) and d) ‘solvent vapour annealed’ (DIO additive).
D. Xiong, X. Xu, Q. Arooj, H. Wang, L. Yin, W. Li, H. Wu, Z.
Zhao, W. Chen, M. Wang, F. Wang, Y.-B. Cheng and H. He,
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Y.-C. Hung, J.-C. Jiang, C.-Y. Chao, W.-F. Su and S.-T. Lin, J.
Phys. Chem. B, 2009, 113, 8268.
‘
In conclusion, we have designed and synthesized a new non-
fullerene acceptor FRd containing central electron donating
fluorene core attached to the rhodanine end groups via
benzothiadiazole and furan π-spacer for use in OSCs. FRd has
good solubility, strong absorption profile ranging from 300 to
20 nm with high molar extinction coefficient, suitable FMO
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5
.
2
6.
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energy levels and good quenching ability. Its photovoltaic
performance was studied in inverted structured BHJ OSCs. The
7. (a) P. Qin, X. Yang, R. Chen, L. Sun, T. Marinado, T.
Edvinsson, G. Boschloo and A. Hagfeldt, J. Phys. Chem. C,
2007, 111, 1853; (b) D. P. Hagberg, T. Marinado, K. M.
2
PTB7-Th:FRd based OPV devices treated with solvent vapor
Karlsson, K. Nonomura, P. Qin, G. Boschloo, T. Brinck, A.
Hagfeldt and L. Sun, J. Org. Chem., 2007, 72, 9550.
(a) Suman, A. Bagui, V. Gupta, K. K. Maurya and S. P.
Singh, J. Phys. Chem. C, 2016, 120, 24615; (b) Suman, V.
Gupta, A. Bagui and S. P. Singh, Adv. Funct. Mater., 2016,
annealing exibited a highest PCE of 9.4% with a Jsc of 15.7
2
mA/cm and FF of 72.3%. Deeply lying LUMO energy level of
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.
2 2
FRd resulted in high Voc of 0.83 V. As PTB7-Th and FRd have
absorption profile complementary to each other, both
contributed to the photocurrent significantly, which is one of
the possible reasons to achieve high PCE. A high EQE value of
1603820; (c) S. Holliday, R. S. Ashraf, C. B. Nielsen, M.
Kirkus, J. A. Röhr, C.-H. Tan, E. Collado-Fregoso, A.-C.
Knall, J. R. Durrant, J. Nelson and I. McCulloch, J. Am.
Chem. Soc., 2015, 137, 898; (d) K. Wang, Y. Firdaus, M.
Babics, F. Cruciani, Q. Saleem, A. El Labban, M. A.
Alamoudi, T. Marszalek, W. Pisula, F. Laquai and P. M.
Beaujuge, Chem. Mater., 2016, 28, 2200.
75% was also observed in the SVA treated devices. To the best
of our knowledge, the PCE of 9.4% is the highest PCE reported
ever for fluorene core based fullerene-free OSCs. S. Holliday et
al. earlier reported one fluorene core based SMNFA coded as
FBR end capped with rhodanine, which demosterated good
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photovoltaic performance. We synthesized FRd
9. P. E. Schwenn, K. Gui, A. M. Nardes, K. B. Krueger, K. H.
Lee, K. Mutkins, H. Rubinstein-Dunlop, P. E. Shaw, N.
Kopidakis, P. L. Burn and P. Meredith, Advanced Energy
2
using same
core and chromophroic groups incorporating furan unit to
examine the effect of π-spacer on the opto-electronic
Materials, 2011,
0. Y. Wu, H. Bai, Z. Wang, P. Cheng, S. Zhu, Y. Wang, W. Ma
and X. Zhan, Energy Environ Sci., 2015, , 3215.
1, 73.
2
properties of SMNFA. It is seen that FRd possesses deeper
1
1
FMO energy levels and lower band gap compared to FBR
.
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Hence, Introduction of furan π-spacer appears to be a good
strategy to develop efficient SMNFAs by extending π-
conjugation through molecular backbone. This work
demostrates that fluorene based SMNFAs have potential to
achieve high PCE by suitable molecular engineering and proper
optimization of device fabrication steps.
1. B. Kan, M. Li, Q. Zhang, F. Liu, X. Wan, Y. Wang, W. Ni, G.
Long, X. Yang, H. Feng, Y. Zuo, M. Zhang, F. Huang, Y. Cao,
T. P. Russell and Y. Chen, J. Am. Chem. Soc., 2015, 137
3886.
,
12. S. Li, W. Liu, M. Shi, J. Mai, T.-K. Lau, J. Wan, X. Lu, C.-Z. Li
and H. Chen, Energy Environ Sci., 2016, , 604.
3. Y. Lin, Z.-G. Zhang, H. Bai, J. Wang, Y. Yao, Y. Li, D. Zhu
and X. Zhan, Energy Environ Sci., 2015, , 610.
4. H. Lin, S. Chen, H. Hu, L. Zhang, T. Ma, J. Y. L. Lai, Z. Li, A.
Qin, X. Huang, B. Tang and H. Yan, Adv. Mater., 2016, 28
546.
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The authors gratefully acknowledge the financial support of
Indo-UK APEX project (Phase-II). Suman thanks UGC for
providing SRF. AB would like to thank DST for Inspire Faculty
fellowship DST/INSPIRE/04/2017/000087.
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,
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15. R. W. G. N. F. Mott, Electronic Processes in Ionic Crystals,
Oxford University Press, Oxford, 1940.
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| J. Name., 2012, 00, 1-3
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