Reduced Graphene Oxide Transistors
COMMUNICATION
The clear GO solution was collected at a volume of 100 mL in a micro-sy-
ringe and then dropped cast onto the device spinning at 4000 rpm for
30 s. The devices were dried for more than 24 h under vacuum condition.
The reduction of the GO films was performed using 98% hydrazine
vapor generated in a closed cell maintained at 808C overnight. This was
followed by several washes with DI water and ethanol and a final drying
step under a stream of nitrogen gas. Finally, the rGO devices were dried
for more than 24 h under vacuum, and then thermal annealing was per-
formed at 2008C to obtain a better contact.
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Immobilization of pyrene molecules on the rGO device: To noncovalent-
ly functionalize rGO, the pyrene molecules were dissolved in DMF.
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Acknowledgements
This work was supported by the Creative Research Initiatives research
fund (projection title: Smart Molecular Memory) of the Ministry of Edu-
cation Science and Technology (MEST)/NSF.
Keywords: doping · field effect transistors · graphene ·
pyrenes · reduced graphene oxide
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Received: November 11, 2011
Published online: March 20, 2012
Chem. Eur. J. 2012, 18, 5155 – 5159
ꢀ 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
5159