INDIUM(III) SULFIDE

Base Information

• Chemical Name: INDIUM(III) SULFIDE
• CAS No.: 12030-24-9
• Molecular Formula: In2S3
• Molecular Weight: 325.838
• Mol file: 12030-24-9.mol

Synonyms:Indiumsesquisulfide;Indium sulfide (2:3);Indium(3+) sulfide;

Chemical Property of INDIUM(III) SULFIDE

Chemical Property:

• Appearance/Colour: Orange powder
• Melting Point: 1050°C
• PSA: 89.48000
• Density: 4.45 g/cm3
• LogP: 1.94460
• Sensitive.: Moisture Sensitive
• Water Solubility.: Insoluble in water.

Purity/Quality:

99.99%, ^*data from raw suppliers

Indium(III) sulfide (99.99%-In) PURATREM ^*data from reagent suppliers

Safty Information:

• Hazard Codes: Xn
• Statements: 20/21/22-36/37/38
• Safety Statements: 26-36

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Uses: Indium(III) sulfide emerged as a promising low-hazard buffer material and is used to improve the properties of solar cells and also replaces the hazardous CdS. It is a mid band gap semiconductor.

Technology Process of INDIUM(III) SULFIDE

There total 69 articles about INDIUM(III) SULFIDE which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 95.0%

sodium sulfide (1313-82-2) + indium(III) chloride (10025-82-8) → indium(III) sulfide (12030-24-9)

Guidance literature:

In ammonia; byproducts: NaCl; NH3 (liquid); from InCl3 and Na2S in molar ratio 2:3 by stirring at room temp. in liq.NH3 for 36 h; trituration with water and CS2 and annealing at 250°C for 48 h; powder XRD, SEM/EDXA, Raman-, IR-spectroscopies;

DOI:10.1021/ic010648s

Reference yield: 60.0%

indium (7440-74-6) + potassium sulfide + phosphorous (V) sulfide + sulfur (7704-34-9) → indium(III) sulfide (12030-24-9) + 4K(1+)*2In(3+)*2PS4(3-)*P2S6(4-)=K4In2(PS4)2(P2S6)

Guidance literature:

In neat (no solvent); mixt. of K2S, P2S5, S and In was sealed in quartz tube in vac.; heated at 550°C for 24 h; kept at 550°C for 3 d; cooled to 250°C (5 K/h) and to 50°C (10 K/h); washed and sonicated in DMF; decanted; washed (Et2O); dried in N2;

DOI:10.1021/ic902105j

Reference yield: 53.8%

indium(III)trichloride tetrahydrate (22519-64-8) + thiourea (17356-08-0) → indium(III) sulfide (12030-24-9)

Guidance literature:

In water; ethylene glycol; High Pressure; thiourea added to soln. of In salt in diethylene glycol/H2O under stirring; mixt. heated at 200°C in autoclave for 12 h; mesoporous sulfide isolated by centrifugation; washed with H2O and EtOH;dried at 90°C for 5 h;

DOI:10.1021/ic902160m

upstream raw materials:

indium

sulfur

hydrogen sulfide

sodium sulfide

Downstream raw materials:

indium sulfide

sulfur

hydrogen sulfide

indium(III) nitride

Refernces

• 1、 Semenov,Ostapenko,Lukin,Averbakh. "Physical properties of CdS-In2S3 thin films". . p. 111 - 113. Retrieved 2000.
• 2、 Feng, Kai,Yin, Wenlong,Yao, Jiyong,Wu, Yicheng,Shi, Youguo,Wang, Wendong. "Ba3LnInS6 (Ln = Pr, Sm, Gd, Yb) and Ba 2LnGaS5 (Ln = Pr, Nd): Syntheses, structures, and magnetic and optical properties". . p. 11144 - 11149,6. Retrieved 2012.
• 3、 Feng, Kai,Yin, Wenlong,Lin, Zuohong,Yao, Jiyong,Wu, Yicheng. "Five new chalcohalides, Ba3GaS4X (X = Cl, Br), Ba3MSe4Cl (M = Ga, In), and Ba7In 2Se6F8: Syntheses, crystal structures, and optical properties". . p. 11503 - 11508. Retrieved 2013.
• 4、 Oliveira, Marcelo M.,Pessoa, Giuliana M.,Carvalho, Ludmilla C.,Peppe, Clovis,Souza, Antonio G.,Airoldi, Claudio. "N,N′-Dialkyldithiocarbamate chelates of indium(III): Alternative synthetic routes and thermodynamics characterization". . p. 223 - 230. Retrieved 1999.
• 5、 Yin, Wenlong,Feng, Kai,Hao, Wenyu,Yao, Jiyong,Wu, Yicheng. "Synthesis, structure, and properties of Li2In2MQ 6 (M = Si, Ge; Q = S, Se): A new series of IR nonlinear optical materials". . p. 5839 - 5843. Retrieved 2012.
• 6、 Barreau,Bernède,El Maliki,Marsillac,Castel,Pinel. "Recent studies on In2S3 containing oxygen thin films". . p. 445 - 450. Retrieved 2002.
• 7、 Kieven,Dittrich,Belaidi,Tornow,Schwarzburg,Allsop,Lux-Steiner. "Effect of internal surface area on the performance of ZnO In2 S3 CuSCN solar cells with extremely thin absorber". . . Retrieved 2008.
• 8、 Wang, Ming-Fang,Jang, Shyue-Ming,Huang, Jih-Chen,Lee, Chi-Shen. "Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9". . p. 1450 - 1456. Retrieved 2009.
• 9、 Chen, Zhixin,Li, Danzhen,Zhang, Wenjuan,Chen, Chun,Li, Wenjuan,Sun, Meng,He, Yunhui,Fu, Xianzhi. "Low-temperature and template-free synthesis of ZnIn2S 4 microspheres". . p. 9766 - 9772. Retrieved 2008.
• 10、 Zhang, Huan-Huan,Zhan, Guo-Peng,Liu, Zi-Kun,Wu, Chuan-De. "Photocatalytic Hydrogen Evolution Coupled with Production of Highly Value-Added Organic Chemicals by a Composite Photocatalyst CdIn2S4@MIL-53-SO3Ni1/2". . p. 1499 - 1506. Retrieved 2021.