Detail of "106496-80-4"

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Lead zirconate titanate films produced by "facing targets" RF-sputtering

Lead zirconate titanate films produced by "facing targets" RF-sputtering. Roy, R. A.; Etzold, K. F.; Cuomo, J. J. (T. J. Watson Res. Cent., IBM, Yorktown Heights, NY 10598, USA). Mater. Res. Soc. Symp. Proc.In this article, certain chemicals are used. Some of their cas registry numbers are 1304-28-5 and 106496-80-4 , 200(Ferroelectr. Thin Films), 77-82 (English) 1990. CODEN: MRSPDH. ISSN: 0272-9172. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 75 The growth of ferroelec. lead zirconate titanate (PZT) films by rf-sputtering using facing targets is described. This study has focused on producing thin (<500 nm) PZT films on a wide range of substrates including magnesium oxide, spinel, alumina, silicon oxide, and the resp. substrates coated with platinum. Deposition was from two opposed targets sepd. by 10-15 cm, with the substrate plane normal to the targets and outside the cylinder defined by the two targets. This geometry was chosen to obtain compositional uniformity and avoid ion bombardment effects. The deposition temps. ranged from RT to 700° and the process gas was a mixt. of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film compn., microstructure, and properties were evaluated using Rutherford backscattering spectroscopy, x-ray diffraction, optical and electron microscopy, and various elec. measurements. Optimization of process conditions is discussed in terms of phase purity, preferred orientation, and minimization of electrode interaction. .

Anion-assisted pulsed laser deposition of lead zirconate titanate films

Anion-assisted pulsed laser deposition of lead zirconate titanate films. Leuchtner, R. E.; Grabowski, K. S.; Chrisey, D. B.; Horwitz, J. S. (Nav. Res. Lab., Washington, DC 20375-5000, USA).There are some reagents like 106496-80-4 is used in this study. Appl. Phys. Lett., 60(10), 1193-5 (English) 1992. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) A modification of the conventional pulsed laser deposition technique is presented whereby a low energy (￡0.5 eV) electron emitting filament was placed over the substrate during deposition. Using this exptl. arrangement, it was possible to deposit oriented films of the ferroelec. perovskite PbZr0.52Ti0.48O3 on W100V MgO substrates at 550°. When optimized in terms of emission current, the use of the filament caused a decrease by 6 orders of magnitude in the ratio of a nonferroelec. pyrochlore phase relative to the ferroelec. perovskite phase. The surface morphol. concomitantly changed from porous to essentially smooth as the electron emission current was increased. The surface reaction of O anions generated by electron attachment to O mols. is probably responsible for these crystallog. and morphol. changes. .