Detail of "1115-99-7"

Reference

Atomic layer epitaxy of gallium arsenide and role of arsenic source materials of self-limiting mechanism

Atomic layer epitaxy of gallium arsenide and role of arsenic source materials of self-limiting mechanism. Fujii, Kazuyuki; Suemune, Ikuo; Koui, Tomoaki; Yamanishi, Masamichi (Fac. Eng., Hiroshima Univ., Higashi/Hiroshima 724, Japan). Appl. Phys. Lett., 60(12), 1498-500 (English) 1992. 1303-00-0 and 1115-99-7 which are cas registry numbers are also used here. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 At. layer epitaxy (ALE) of GaAs using triethylgallium (TEG) with the combination of arsine has been limited to an extremely narrow temp. range. It is demonstrated that the temp. range for ALE using TEG is substantially expanded when arsine is replaced with an alkyl-As, As[N(CH3)2]3. The role of the As source materials on the self-limiting mechanism is discussed. .

Effect of acceptor impurity addition in low temperature growth of 3C silicon carbide

Effect of acceptor impurity addition in low temperature growth of 3C silicon carbide. Takahashi, Koji; Nishino, Shigehiro; Saraie, Junji (Fac. Eng. Des., Kyoto Inst. Technol., Kyoto 606, Japan). J. Cryst. Growth, 115(1-4), 617-22 (English) 1991. CODEN: JCRGAE. ISSN: 0022-0248. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 The crystallinity of 3C-SiC on Si by CVD is significantly influenced by B2H6, Me3Al (TMA) and Et3Ga (TEG) addn. at relatively low temps. These acceptor doping agents lower the epitaxial temp. and doped 3C-SiC is epitaxially grown at 1100-1150° without buffer layer formation. Below 1150°, TMA addn. affects the growth rate and decreases the activation energy for the deposition of 3C-SiC from 34.In this experiment, several chemicals are used like 75-24-1 and 1115-99-7 7 kcal/mol for undoped growth to 8.7 kcal/mol for Al-doped growth. .