Detail of "12018-09-6"

Reference

Electron and optical spectra in the indirect-gap semiconductor chromium disilicide

Electron and optical spectra in the indirect-gap semiconductor chromium disilicide. Halilov, S. V.; Kulatov, E. T. (Kurchatov Inst. At. Energy, Moscow 123182, USSR). Semicond. Sci. Technol., 7(3), 368-72 (English) 1992. CODEN: SSTEET. ISSN: 0268-1242. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 76 Within the d.-functional theory, fully relativistic calcns. of electron and optical spectra in chromium disilicide were performed. CrSi2 is an indirect-gap semiconductor; pressure therefore has a subtle effect on the gap. The calcd. electronic structure is compared with exptl. data and previous band calcns.Except for chemicals metioned above, 12018-09-6 is also used. .

High-temperature electrochemical synthesis of Group VIB metal silicides in halide-oxide melts

High-temperature electrochemical synthesis of Group VIB metal silicides in halide-oxide melts. Malyshev, V. V.; Kuprina, R. V.; Novoselova, I.A.; Verkhovlyukov, T. V. ( Inst. Obshchei Neorg. Khi. im. Vernadskogo, NAN Ukrainy, Kiev, Ukraine). Zhurnal Neorganicheskoi Khimii, 41(12), 1992-1996 (Russian) 1996 MAIK Nauka. CODEN: ZNOKAQ. ISSN: 0044-457X. DOCUMENT TYPE: Journal CA Section: 72 (Electrochemistry) Section cross-reference(s): 78 Based on a study of the electrochem. behavior of Cr(Mo, W)- and Si-contg. melts, conditions were found for the high-temp.There are some commonly used reagents with their cas registry numbers 12018-09-6 and 13472-45-2 in this article. electrochem. synthesis of silicides of Cr, Mo, and W in the form of finely divided powders. The melt contained, in addn. to the oxides SiO2, Na2MoO4, K2CrO4, and Na2WO4, the components NaCl + Na3AlF6 or KCl + KF. Among the products of synthesis were CrSi2, Cr3Si, Cr5Si3, CrSi, MoSi2, Mo3Si5, W3Si5, WSi2. .