Detail of "12020-66-5"

Reference

Microscopic studies of the magnetic properties of europium sulfide selenide spin glasses

Microscopic studies of the magnetic properties of europium sulfide selenide spin glasses. Bauermann, T.; Abd-Elmeguid, M. M.; Sanchez, J. P.; Takabatake, T.; Micklitz, H. (Inst. Experimentalphys. IV, Ruhr-Univ. Bochum, Bochum D-4630, Fed. Rep. Ger.). J. Phys. C, 16(33), 6435-42 (English) 1983. CODEN: JPSOAW. 14378-48-4 and 12020-66-5 which are cas registry numbers of chemicals are mentioned. ISSN: 0022-3719. DOCUMENT TYPE: Journal CA Section: 77 (Magnetic Phenomena) The concn. dependence of the satn. hyperfine field as deduced from 151Eu Moessbauer spectroscopy in EuSxSe1-x showed that there is a continuous change of the local magnetic structure along the series. The spin glass phases consist of nearly 2-dimensional ferromagnetic clusters whereas the ferromagnetic states close to the ferromagnetic-spin-glass boundary are frustrated ferromagnets. Relaxation phenomena are obsd. in both the spin glass and frustrated ferromagnetic phases. .

Semiconducting device for injecting a spin polarized current in a semiconductor

Semiconducting device for injecting a spin polarized current in a semiconductor. Fumagalli, Paul; Lippitz, Holger; Mueller, Christian; Paggel, Jens (Freie Universitaet Berlin, Germany). Eur. Pat. Appl. EP 1388898 A1 11 Feb 2004, 15 pp. DESIGNATED STATES: R: AT, BE, CH, DE, DK, ES, FR, GB, GR, IT, LI, LU, NL, SE, MC, PT, IE, SI, LT, LV, FI, RO, MK, CY, AL, TR, BG, CZ, EE, SK. (German). (European Patent Organization). CODEN: EPXXDW. CLASS: ICM: H01L029-82. 29678-92-0 and 12020-66-5 are also in the experiment. ICS: H01F010-32. APPLICATION: EP 2002-90303 27 Aug 2002. PRIORITY: EP 2002-90288 9 Aug 2002. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 77 The invention concerns a semiconductor component with a first semiconducting layer and a second semiconducting layer of a ferromagnetic material, which are coupled in such a manner with the first semiconducting layer that spin-polarized semiconducting charge carriers are injected into the first semiconducting layer. According to the invention the second semiconducting layer interacts with charge carriers existing outside the second semiconducting layer, and the Curie temp. of the second semiconducting layer is at least 250 K. .