Reference

Method for preparation of charge for growth of single crystals of Sr3NbGa3Si2O14 and Sr3TaGa3Si2O14 e with calcium gallogermanate structure

Method for preparation of charge for growth of single crystals of Sr3NbGa3Si2O14 and Sr3TaGa3Si2O14 e with calcium gallogermanate structure. Dorogovin, B. A.; Stepanov, S. Yu.; Domoroshchina, E. N.; Dubovskii, A. B.; Filippov, I. M. (Federal'noe Gosudarstvennoe Unitarnoe Predpriyatie "Vserossiyskii Nauchno-Issledovatel'skii Institut Sinteza Mineral'nogo Syr'ya", Russia). Russ. RU 2241793 C2 10 Dec 2004, No pp. given (Russian). (Russia). CODEN: RUXXE7. CLASS: ICM: C30B029-34. ICS: C30B015-00. APPLICATION: RU 2003-102514 31 Jan 2003. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 The method for solid-phase synthesis includes mixing of heat pretreated oxides of elements occurring in grown single crystal Sr3MGa3Si2O14, where M is Nb or Ta, in stoichiometric ratio and sintering of mixt. obtained at 84-85% with respect to synthesis temp. of corresponding crystals. The charges can be obtained in tablet form for growth of high quality crystals useful for piezoelec. 1313-96-8 and 12024-21-4 are just another two chemicals used in this study. applications. .

Formation of sintered parts consisting of zinc oxide

Formation of sintered parts consisting of zinc oxide. Huettl, Grit (FNE Forschungsinstitut fuer Nichteisen-Metalle Freiberg G.m.b.H. 12024-21-4 and 7631-86-9 are also occured in this study., Germany). PCT Int. Appl. WO 2005001155 A1 6 Jan 2005, 17 pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (German). (World Intellectual Property Organization). CODEN: PIXXD2. CLASS: ICM: C23C014-34. ICS: C23C014-08; C04B035-453; H01B001-08. APPLICATION: WO 2004-EP6992 28 Jun 2004. PRIORITY: DE 2003-10329338 30 Jun 2003. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 57 The invention relates to Zn oxide sintered parts, to methods for the prodn. thereof, and to the use of the same as sputter targets for producing highly electroconductive transparent layers. The inventive Zn oxide sintered part contains (1) between 0.1-20% of an oxide of an at least trivalent, pos. charged metal, and (2) at 0.1-20% of an oxide different from the first oxide of an at least trivalent, pos. charged metal, or (3) 30.05% of a compd. contg. a monovalent, neg. charged element, resp. in relation to the wt. of the Zn oxide. .