Detail of "12033-89-5"

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Integrated-type multiband-gap amorphous silicon solar cells

Integrated-type multiband-gap amorphous silicon solar cells. Tsuda, S.; Tarui, H.; Ohnishi, M.; Sakai, S.; Uchihashi, K.; Matsuoka, T.; Nakano, S.; Kiyama, S.; Kawata, H.; Kuwano, Y. (Res. Cent., Sanyo Electr. Co. Ltd., Hirakata, Japan). J. Non-Cryst. 12033-89-5 and 7440-42-8 are also in the experiment. Solids, 59-60(2), 1135-8 (English) 1983. CODEN: JNCSBJ. ISSN: 0022-3093. DOCUMENT TYPE: Journal CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) Section cross-reference(s): 76 In the title cells stacked-type solar cells having different band gaps are integrated on substrate. Materials, design theory, and a processing method were investigated. As a narrow band gap material, a SiSn:H (amorphous hydrogenated Si-Sn alloy) was 1st deposited from a glow-discharge reaction, and the photovoltaic effect of a-SiSn:H was obsd. As a wide band-gap material, a-SiN:B:H deposited from a glow discharge had good properties for use in solar cells. An optimum design theory for this type of a-Si solar cell was established. As a new fabrication process, a laser patterning method was investigated, and it was useful for the fabrication of the integrated structure. .

Inversion layer solar cells on chemically vapor-deposited polycrystalline silicon thin films

Inversion layer solar cells on chemically vapor-deposited polycrystalline silicon thin films. Burte, E. P.; Hezel, R. (Inst. Werkstoffwiss. VI, Univ.Chemicals with cas numbers 12033-89-5 and 7440-21-3 also play role. Erlangen-Nuernberg, Erlangen D-8520, Fed. Rep. Ger.). J. Appl. Phys., 55(4), 1183-7 (English) 1984. CODEN: JAPIAU. ISSN: 0021-8979. DOCUMENT TYPE: Journal CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) The metal-insulator-semiconductor (MIS) inversion layer (IL) process is suited to fabricate solar cells on fine-grained polycryst. Si thin films prepd. by low-pressure chem.-vapor deposition (LPCVD). Plasma-enhanced Si nitride was used as dielec. to create a highly conductive inversion layer at the Si surface. As revealed by high-frequency and quasistatic capacitance-voltage measurements, the I/S interface for fine-grained LPCVD polycryst. Si is similar to that for the coarse-grained Wacker Silso material. An excellent external quantum efficiency in the short-wavelength region was obtained for solar cells on both materials. For the 1-cm2 solar cell on 2-W-cm p-doped LPCVD Si an active-area efficiency of 1.8% was obtained. Ways of improving these cells are suggested. A total area air-mass-1 efficiency of 13% was achieved for coprocessed 4-cm2 MIS-IL solar cells on Wacker Silso. .