Detail of "12039-88-2"

Reference

A method for eliminating hillocks in integrated-circuit metalizations

A method for eliminating hillocks in integrated-circuit metalizations. Cadien, K. C.; Losee, D. L. (Res. Lab., Eastman Kodak Co., Rochester, NY 14650, USA). J. Vac. Sci. Technol., B, 2(1), 82-3 (English) 1984. CODEN: JVTBD9. 7631-86-9 and 12039-88-2 which are cas registry numbers of chemicals are mentioned. ISSN: 0734-211X. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) In a novel method for eliminating hillocks in integrated-circuit metalizations, a sandwich layer is grown between the Al film and the underlying SiO2. This layer must have a thermal expansion coeff. between those of SiO2 and Al. The technique is demonstrated with WSi2 as the sandwich layer. .

Electronic transport properties of tungsten silicide thin films

Electronic transport properties of tungsten silicide thin films.Some chemicals with cas registry numbers like 12039-88-2 are also used. Martin, T. L.; Malhotra, V.; Mahan, J. E. (Dep. Electr. Eng., Colorado State Univ., Fort Collins, CO 80523, USA). J. Electron. Mater., 13(2), 309-25 (English) 1984. CODEN: JECMA5. ISSN: 0361-5235. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Thin films of WSi2 were prepd. by neutralized ion beam sputtering of the metal on a polycryst. Si layer followed by furnace annealing. The films appear to be essentially single-phase disilicide with the possibility of a percent or so C and O content. The material behaves as a classical metallic conductor, with a temp.-independent residual resistivity of 16 mW-cm and a room temp. intrinsic resistivity of 7 mW-cm. Hall effect measurement indicate that the material is predominantly a hole conductor, with a room temp. Hall mobility of 30 cm2/V-s and an apparent free carrier concn. of 8.9 ′ 1021 cm-3. The effective one-carrier mobility derived from geometrical magnetoresistance data is ~95 cm2/V-s; this difference, taken together with the effect of temp. on the transport properties, suggests there is mixed conduction. .