Detail of "12044-55-2"

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Excitonic polaritons in ZnAs2

All Rights Reserved. Excitonic polaritons in ZnAs2. Syrbu, Nicolae; Stamov, Ivan; Dorogan, Andrei; Nemerenco, Lucretia ( Technical University of Moldova, Chisinau MD-2004, Moldova). Japanese Journal of Applied Physics, Part 1: Regular Papers, Brief Communications & Review Papers, 45(11), 8724-8727 (English) 2006 Japan Society of Applied Physics. CODEN: JAPNDE. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) The allowed exciton transitions n = 1, 2, 3 were revealed in the reflection spectra of ZnAs2 monocrystals at 10 K.Several substances like 12044-55-2 may be metioned in this study. Transverse and longitudinal exciton energies, longitudinal splitting value, translation and reduced exciton masses, electron and hole effective masses were revealed from fitting of the exciton spectra. Absorption spectra and absorption interference were studied for E w c and E ^ c polarizations for thin samples. The polariton branches of exciton polaritons were calcd. from the exptl. results. .

Fabrication of p-type Group IIB-VIA semiconductors

Fabrication of p-type Group IIB-VIA semiconductors. Burgener, Robert H.; Felix, Roger L.; Renlund, Gary M. (USA ). U.S. Pat. Appl. Publ. US 2004235214 A1 25 Nov 2004,27 pp. (English). (United States of America). CODEN: USXXCO. CLASS: ICM: H01L021-00. NCL: 438048000. APPLICATION: US 2004-849347 19 May 2004. PRIORITY: US 2003-PV471916 20 May 2003; US 2003-PV488677 18 Jul 2003; US 2004-PV560780 8 Apr 2004. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Com. viable methods of manufg. 56450-43-2 and 12044-55-2 are cas registry numbers of chemicals which are used as reagents here. p-type group IIB-VIA semiconductor materials are disclosed. A thin film of Group IIB-VIA semiconductor atoms is deposited on a self supporting substrate surface. The semiconductor material includes atoms of Group IIB elements, Group VIA elements, and 31 p-type dopants. The semiconductor material may be deposited on the substrate surface under deposition conditions in which the group IIB atoms, Group VIA atoms, and p-type dopant atoms are in a gaseous phase prior to combining as the thin film. Alternatively, a liq. deposition process may be used to deposit the group IIB atoms, Group VIA atoms, and p-type dopant atoms in a predetd. orientation to result in the fabrication of the group IIB-VIA semiconductor material. The resulting semiconductor thin film is a persistent p-type semiconductor, and the p-type dopant concn. is e1016 atoms/cm3. The semiconductor resistivity is f0.5 W×cm. .