Detail of "12063-98-8"

Reference

Pre-threshold defects in gallium phosphide and gallium selenide irradiated by 100-keV electrons

Pre-threshold defects in gallium phosphide and gallium selenide irradiated by 100-keV electrons. Atakulov, B. A.; Sultanov, B. D.; Tokhirov, K. R. (Fergan. Pedagog. Inst., Fergana, USSR). Izv. Akad. Nauk UzSSR, Ser. Fiz.-Mat. Nauk, (6), 57-8 (Russian) 1984. CODEN: IUZFAU. DOCUMENT TYPE: Journal CA Section: 71 (Nuclear Technology) A method of measuring the sp. resistance was used to study the prodn. and annealing of pre-threshold radiation defects in GaP [12063-98-8] and GaSe [12024-11-2] grown from a melt of single crystals of p- and n-types with an initial concn. of current carriers of 1016/m3, and e and hole mobilities of 70 and 50 cm2/V-s, resp. Samples (0.02 ′ 0.3 ′ 1.0 cm) were obtained by cutting along the plane (111). The samples were exposed to 100-keV e, the integral flux was of 1 ′ 1018 e/cm2, the e c.d. was 2-5 mA/cm2, and the temp. during irradn. was 80 K. During the irradn. in vacuum (5 ′ 10-6 mm Hg), the sp. resistance increased in n- as well as in p-type crystals. A tendency to a certain satn. was shown with increasing dose, which could also be due to the occurrence of annealing effects during the irradn. process. Annealing in n-type samples occurs in 2 stages, at 100-140 and 250-310 K. The 1st stage is conditioned by a migration of an interstitial atom of Ga(P, Se), which interacts with a bivacancy according to the Watkins mechanism. The 2nd stage is assocd. with releasing the vacancy, prodn. and disintegration of the center vacancy-admixt. Annealing in p-type samples occurs in 3 stages, at 100-200, 140-160, and 300 K. The recombination of coupled Frenkel pairs, the migration of a neutral vacancy, and the disintegration of a complex vacancy-admixt., resp., are the mechanisms of the occurrence of the 3 above-mentioned stages.

Use of gallium arsenide (GaAs) and gallium phosphide (GaP) films with anomalous photovoltage for the recording of x-rays

Use of gallium arsenide (GaAs) and gallium phosphide (GaP) films with anomalous photovoltage for the recording of x-rays. Abdullaev, N. (USSR). At. Energ., 61(5), 362-3 (Russian) 1986. CODEN: AENGAB. ISSN: 0004-7163. DOCUMENT TYPE: Journal CA Section: 71 (Nuclear Technology) Section cross-reference(s): 73, 74, 76 The possibility was investigated of using films with anomalous photovoltage, prepd. from semiconductor compds. of the type A3B5 (GaP [12063-98-8] and GaAs [1303-00-0]), for recording x-rays. While films of CdTe and Sb2Se3 are sensitive to x-rays only in air, films of GaP and GaAs are sensitive to x-rays in both air and in vacuum. To develop the anomalous photovoltage and the corresponding sensitivity to x-rays of Si and Ge films, preliminary treatment (oxidn.) in air was required. However, in the studied films of GaP and GaAs, such a procedure is unnecessary.