Detail of "12125-58-5"

Reference

X-ray diffraction study of ytterbium(II) telluride-thulium(II) telluride solid solutions

X-ray diffraction study of ytterbium(II) telluride-thulium(II) telluride solid solutions. Eliseev, A. A.; Rukk, F.; Abrikosov, N. Kh.; Zinchenko, K. A.; Zemlyanukhina, V. M. (Mosk. Inst. Tonkoi Khim. Tekhnol. im. Lomonosova, Moscow, USSR). Zh. Neorg. Khim., 22(4), 1124-5 (Russian) 1977. CODEN: ZNOKAQ. DOCUMENT TYPE: Journal CA Section: 75 (Crystallization and Crystal Structure) YbTe-TmTe solid solns. with all concn. 12040-14-1 and 12125-58-5 which are cas registry numbers of substances are two of reagents here. ratios were synthesized in quartz ampuls or Ta crucibles. The x-ray diffraction study showed the structure of these crystals to be of NaCl type in which the lattice period has a pos. deviation from Vegard's law. The change in lattice parameter depends on the difference in ionic radii of Yb and Tb and, probably, the variable valency of Tm. .

Growth and characterization of lead-tin-ytterbium-telluride for diode lasers

Growth and characterization of lead-tin-ytterbium-telluride for diode lasers. Partin, D. L.Several substances are used for example 12125-58-5 and 7440-28-0 which are their cas registry numbers. (Phys. Dep., Gen. Mot. Res. Lab., Warren, MI 48090-9055, USA). J. Electron. Mater., 12(6), 917-29 (English) 1983. CODEN: JECMA5. ISSN: 0361-5235. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 75, 76 (Pb, Sn, Yb)Te is a new and potentially useful material for fabricating double-heterojunction (Pb, Sn)Te diode lasers by mol.-beam epitaxy. These lasers should have improved carrier and photon confinement, resulting in improved external quantum efficiency and higher device operating temp. Room-temp. optical transmission studies showed that the band gap of Pb1-xYbxTe increases approx. as dEg/dx = 3.3 eV for x < 0.04, and that the n decreases with increasing x. Doping studies of (Pb1-ySny)0.97Yb0.03Te indicate that it can be doped heavily p-type at low temps. for y ~0.10. The lattice const. of (Pb0.85 Sn0.15)1-xYbxTe is independent of x up to x ~0.10. These characteristics make (Pb1-ySny)1-xYbxTe well-suited for the fabrication of lattice-matched double-heterojunction lasers with y ~0.10. .