Reference

Optical recording material containing metal azaannulene compound for semiconductor laser

Optical recording material containing metal azaannulene compound for semiconductor laser. Tomura, Tatsuya; Sato, Tsutomu; Sasa, Noboru (Ricoh Kk, Japan). Jpn. Kokai Tokkyo Koho JP 08332773 A2 17 Dec 1996 Heisei, 12 pp. 121482-73-3 and 186961-21-7 are also occured in this study. (Japanese). (Japan). CODEN: JKXXAF. CLASS: ICM: B41M005-26. ICS: C09B047-00; G11B007-24. APPLICATION: JP 1995-164740 7 Jun 1995. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Section cross-reference(s): 28, 41 The material is obtained by forming a recording layer contg. 31 metal azaannulene compd. I [M = (2 H-, halo-, or O-contg.) divalent, trivalent, or tetravalent metal, [(OPOR1R2)m-, (OR3)n-, (OCOR4)o-, or (OSiR5R6R7)p-contg.] metal; R1-7 = H, (un)substituted monovalent aliph. hydrocarbyl, (un)substituted monovalent arom. hydrocarbyl; m, n, o, p = 0-2; Z1-4 = alkoxy-, aryloxy-, alkylthio-, arylthio-, C32 alkyl-, and/or halo-substituted thiophene, imidazole, pyridine, pyrazine, furan, thiazole, oxazole, unsubstituted thiophene, unsubstituted furan, unsubstituted thiazole, unsubstituted oxazole] directly on a substrate or via an underlayer and optionally forming a metal reflection layer and a protective layer on the recording layer. The material showed good light resistance and storage stability. .