Detail of > 123847-85-8
- CAS Number:
- 123847-85-8
- Name:
[1,1'-Biphenyl]-4,4'-diamine,N4,N4'-di-1-naphthalenyl-N4,N4'-diphenyl-
- Superlist Name:
- N,N'-Bis(1-naphthalenyl)-N,N'-bisphenyl-(1,1'-biphenyl)-4,4'-diamine
- Formula:
- C44H32N2
- Molecular Structure:
![Molecular Structure of 123847-85-8 ([1,1'-Biphenyl]-4,4'-diamine,N4,N4'-di-1-naphthalenyl-N4,N4'-diphenyl-)](http://www.lookchem.com/300w/2010/0617/123847-85-8.jpg)
- Synonyms:
- [1,1'-Biphenyl]-4,4'-diamine,N,N'-di-1-naphthalenyl-N,N'-diphenyl- (9CI);4,4'-Bis[N-(1-naphthyl)-N-phenylamino]biphenyl;4,4'-Bis[phenyl(naphthalen-1-yl)amino]-1,1'-biphenyl;N,N'-Biphenyl-N,N'-bis(1-naphthyl)[1,1'-biphenyl]-4,4'-diamine;N,N'-Biphenyl-N,N'-bis-(1-naphthenyl)-[1,1'-biphenyl]-4,4'-diamine;N,N'-Bis(naphthalen-1-yl)-N,N'-diphenylbenzidine;N,N'-Bis(a-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine;N,N'-Di(1-naphthyl)-N,N'-diphenyl-4,4'-diaminobiphenyl;N,N'-Di(naphthalen-1-yl)-N,N'-diphenylbenzidine;N,N'-Di-1-naphthyl-N,N'-diphenylbenzidine;N,N'-Diphenyl-N,N'-bis(a-naphthyl)-1,1'-biphenyl-4,4'-diamine;NPB;NPB (photoreceptor);ST16/7;a-NPD;
- Molecular Weight:
- 588.75
- Density:
- 1.213 g/cm3
- Melting Point:
- 279-283 °C
- Boiling Point:
- 772.5 °C at 760 mmHg
- Flash Point:
- 340.8 °C
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Reference
- Improved stability of doped organic electroluminescent diodes
- Improved stability of doped organic electroluminescent diodes. Sato, Y.; Ichinosawa, S.; Kanai, H. (Yokohama Research Center, Mitsubishi Chemical Corp., Yokohama 227, Japan). Inorganic and Organic Electroluminescence, [International Workshop on Electroluminescence], 8th, Berlin, Aug. 13-15, 1996, 255-258. Edited by: Mauch, Reiner H.; Gumlich, Hans-Eckhart. Wissenschaft und Technik: Berlin, Germany. (English) 1996.Several substances with their cas registry numbers 147-14-8 and 123847-85-8 may be metioned in this study. CODEN: 63OXAW. DOCUMENT TYPE: Conference CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 76 The authors conducted a study of the stability of org. electroluminescent (EL) diode during operation. An introduction of a high TG (glass transition temp.) hole transport material and use of a proper structure (ITO buffer layer and doped emitter layer) resulted in an improved stability of the device: the half decay time of >10,000 h can be expected at an initial luminance of 100 cd/m2. Doping effect of rubrene was quite dramatic compared with the undoped device; the operation lifetime was improved by 2 orders of magnitude with this doping. Probably the degrdn. is closely related to an emission mechanism of the diode. .
- Organic electroluminescent devices with improved stability
- Organic electroluminescent devices with improved stability. Van Slyke, S. A.; Chen, C. H.; Tang, C. W. (Imaging Res. Advanced Dev., Eastman Kodak Co., Rochester, NY 14650-2110, USA). Applied Physics Letters, 69(15), 2160-2162 (English) 1996 American Institute of Physics. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) Section cross-reference(s): 76 Highly stable org. electroluminescent devices based on vapor-deposited aluminum tris(quinolinolato) (Alq) thin films were achieved. The improvement in stability is derived from several factors including: (1) a multilayer thin-film structure with a CuPc stabilized hole-injection contact, (2) a hole-transport diamine layer using a naphthyl-substituted benzidine deriv., and (3) an a.c. drive wave form. These emissive devices showed an operational half-lifetime of ~4000 h from an initial luminance of 510 cd/m2.Except for chemicals metioned above, 2085-33-8 and 123847-85-8 are also used. .
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