Detail of "12608-18-3"

Reference

Features of the surface topology of layered In4Se3 crystals

All Rights Reserved. Features of the surface topology of layered In4Se3 crystals. Balitskii, A. A. 7440-74-6 and 12608-18-3 are cas registry numbers. These chemicals are also mentioned in this article. (L'vov. Nats. Univ. im. I. Franko, Lvov, Ukraine). Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, (2), 63-64 (Russian) 2006 Izdatel'stvo "Neptun-Tekhnologiya". CODEN: TKEACV. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 66 The surface structure of cut In4Se3 layered crystals was analyzed from the point of view of their applications in nanoelectronics. Their surface roughness was found to be ideal for the formation of sharp heterojunctions on In4Se3 substrates. The surface of In4Se3 was rich in In clusters and nanopores. .

Interaction of GaSe with an In4Se3 substrate during MBE

All Rights Reserved. Interaction of GaSe with an In4Se3 substrate during MBE. Balitskii, O. A. (Department for Electronics, Ivan Franko National University of Lviv, Lvov UA-79005, Ukraine). Zhurnal Fizichnikh Doslidzhen, 9(3), 265-267 (Ukrainian) 2005 L'vivs'kii Derzhavnii Universitet imeni Ivana Franka. CODEN: ZFDOFY. ISSN: 1027-4642. DOCUMENT TYPE: Journal CA Section: 66 (Surface Chemistry and Colloids) Section cross-reference(s): 75 The processes of In4Se3/GaSe heterostructures formation during MBE were investigated. During epitaxy a system of hexagonal-like GaSe clusters was formed. An attempt to stabilize the epitaxial film by heat treatment resulted in interfacial reaction producing Ga2Se3 and elemental indium islands as a two phase mixt. Surface properties of the deposited structures were discussed. 12024-24-7 and 12608-18-3 are just another two chemicals used in this study. .