Detail of "1304-39-8"

Reference

The dielectric constant of barium mono-chalcogenides and their improved band gap results

All Rights Reserved.Some chemicals with cas registry numbers like 12009-36-8 and 1304-39-8 are also used. The dielectric constant of barium mono-chalcogenides and their improved band gap results. Dadsetani, M.; Pourghazi, A. (Physics Department, University of Isfahan, Esfahan, Iran). Optics Communications, 266(2), 562-564 (English) 2006 Elsevier B.V. CODEN: OPCOB8. ISSN: 0030-4018. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 65 We have applied Engel-Vosko exchange energy within d. functional theory, to calc. the electronic structure and the optical properties of BaX (X = Te, Se, and S) compds. via full potential linearized APW method. We have found that this improves the band gap results comparing to our previous work in which we had made use of Perdew et al. exchange energy functional. We have also calcd. the dielec. const. of these compds., using both Perdew et al. and Engel-Vosko schemes. Engel-Vosko exchange energy functional leads to a better result. We have also reported the effect of spin-orbit coupling on the results. .

Pressure-induced metallization of barium selenide

Pressure-induced metallization of barium selenide. Weir, Samuel T.; Vohra, Yogesh K.; Ruoff, Arthur L. (Dep. Mater. Sci. Eng., Cornell Univ., Ithaca, NY 14853, USA). Phys. Rev. B: Condens. Matter, 35(2), 874-6 (English) 1987. CODEN: PRBMDO. ISSN: 0163-1829. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The pressure-induced metalization was obsd. using both elec.-resistivity and optical-reflectivity measurements. Measurements of the elec. resistivity of BaSe up to a pressure of 65.2 GPa show a leveling off of the resistivity at ~52 GPa, indicating the metalization of BaSe. Optical-reflectivity spectra taken of the BaSe-sample/diamond interface up to 72.2 GPa show a significant rise in the low-energy (0. 1304-39-8 which is the cas registry number of one of substances is just one of reagents here.5 eV) reflectivity at pressures >61 GPa. This rise in reflectivity is probably assocd. with the plasma edge of BaSe in its metallic state. The resistivity and reflectivity data are compared with each other as well as with published high-pressure optical-absorption data. .