Reference

Crystal growth of barium bismuthate plumbate

Crystal growth of barium bismuthate plumbate. (Nippon Telegraph and Telephone Public Corp., Japan).In this study， 12047-25-5 and 1304-76-3 are also used. Jpn. Kokai Tokkyo Koho JP 58194800 A2 12 Nov 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: C30B029-22; C01G029-00; C30B009-12; C30B015-00. ICA: H01L039-00. APPLICATION: JP 82-74510 6 May 1982. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 Crystals of BaPb1-xBixO3 superconductors can be grown without decompn. by pulling from or seeding a melt of BaO 5-25, Bi2O3 <20, and PbO2 60-90 wt.% . .

Glass for coating semiconductors

Glass for coating semiconductors. (Toshiba Corp., Japan). Jpn. Kokai Tokkyo Koho JP 58074536 A2 6 May 1983 Showa, 4 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: C03C003-10; C03C003-30. ICA: H01L021-56. APPLICATION: JP 81-171469 28 Oct 1981. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Glass contg. PbO 330, Bi2O3 0.01-5%, and the balance Al2O3 and/or B2O3 is used for coating semicondutors. Thus, a mixt. contg. PbO 42, SiO2 40, and Al2O3 18% was mixed with 0. There are some commonly used reagents like 1304-76-3 in this article.05% Bi2O3, fused at 1300°, cooled, crushed to -325 mesh, coated on a diode, and it was coated with Al to form an electrode. The diode had an elec. current leakage of 80 nA, compared to 120 nA for a diode coated with glass contg. no Bi2O3. .