Detail of > 1304-82-1
- MSDS Download

- CAS Number:
- 1304-82-1
- Name:
Bismuth telluride(Bi2Te3)
- Superlist Name:
- Bismuth telluride
- Formula:
- Bi2Te3
- Molecular Structure:

- Synonyms:
- Bismuthsesquitelluride;Dibismuth tritelluride;
- Molecular Weight:
- 800.76
- EINECS:
- 215-135-2
- Density:
- 7.642 g/mL at 25 °C(lit.)
- Melting Point:
- 585 °C(lit.)
- Appearance:
- Gray or black hexagonal platelets
- Hazard Symbols:
Xn- Risk Codes:
- 20/21/22-36/37/38
- Safety:
- 26-36Details
- Transport Information:
- UN 3284 6.1/PG 3
- Deleted CAS:
- 1269232-64-5
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Reference
- Stabilization of the parameters of p-bismuth antimony telluride (p-Bi2-xSbxTe3) - branches of film converters of heat and radiant energy
- Stabilization of the parameters of p-bismuth antimony telluride (p-Bi2-xSbxTe3) - branches of film converters of heat and radiant energy. Atakulov, Sh. B. (Fergansk. Gos. Pedagog. Inst., Fergana, USSR). Geliotekhnika, (5), 11-14 (Russian) 1983. CODEN: GLOTAY. ISSN: 0016-6022. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The possibility is shown of increasing and stabilizing the coeff. of thermoelec. power of films by thermal treatment, when the temp. 1327-50-0 and 1304-82-1 are also in the experiment. of treatment exceeds the condensation temp. The mechanism of change of the properties of films by thermal treatment is assocd. with the interaction of films with the O of the atm. and with the temp. of recrystn. .
- Structure of the conduction band of bismuth telluride (Bi2Te3)
- Structure of the conduction band of bismuth telluride (Bi2Te3). Aliev, S. A.; Kakhramanov, K. Sh.; Ismailov, Sh. S.; Selim-Zade, R. I. (Spets. Konstr. Byuro "Tellur", Opytn. Proizvod. Inst. Fiz.Several reagents such as 1304-82-1 is used here., Baku, USSR). Deposited Doc., VINITI 1170-83, 15 pp. Avail. VINITI (Russian) 1982. DOCUMENT TYPE: Report CA Section: 76 (Electric Phenomena) Section cross-reference(s): 65, 77 To det. the d.-of-states effective mass, verify the validity of a 2-band model and its effect on other effects, the elec. cond., Hall effect, thermoemf., magneto thermoemf., and transverse Nernst-Ettingshausen effect were measured at 80-300 K for samples with carrier concn. n of 6 ′ 1018-9 ′ 1019 cm-3. The data agree with a single-band model taking into account band nonparabolicity. The concn. dependence of the electron effective mass was detd. The conduction-band structure deviates from quadratic form. The dispersion law corresponds to Kane theory. .
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