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Detail of > 1306-25-8

  • MSDS Download
  • CAS Number:
  • 1306-25-8
  • Name:
  • Cadmium telluride(CdTe)

  • Superlist Name:
  • Cadmium telluride
  • Formula:
  • CdTe
  • Molecular Structure:
  • Synonyms:
  • Cadmiumtelluride (8CI);Cadmium monotelluride;Irtran 6;
  • Molecular Weight:
  • 240.00
  • EINECS:
  • 215-149-1
  • Density:
  • 6.2 g/mL at 25 °C(lit.)
  • Melting Point:
  • 1041 °C
  • Hazard Symbols:
  • ToxicT, DangerousN, HarmfulXn
  • Risk Codes:
  • 45-20/21/22-50/53
  • Safety:
  • 53-22-61-60Details
  • Transport Information:
  • UN 2570 6.1/PG 3
  • Deleted CAS:
  • 23100-72-3,905982-64-1
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CAS No. 

1306-25-8 Cadmium tellurideCompetitive Product

Assay:99.99%  Appearance:Lump, Powder  Package:It is packed wi...  Application:It is mainly us...
Impurity Content (ppm weight) Element Guarantee Value(max) Test Result Element Guarantee Value(max) Test Result Element Guarantee Value(max) Test Result Cu 0.5 In / Al 1.0 Ag 0.5 Ca / Se 0.5 Mg 0.5 Fe 0.5 Pb 1.0 Sb / Cd /
China (Mainland)   2316
  • Tel:+86-25-52330390
  • Address:R1101 A, Modern Business Building, Baixia District, Nanjing China-210001
MSN:vivian.beidier@hotmail.comYahoo! Messenger

CAS No. 

1306-25-8 Cadmium tellurideCompetitive Product

  Appearance:powder, grain
Cadmium telluride (CdTe) 1306-25-8 5N, -200 mesh powder, grain, 1-10 mm piece 6N, and sputtering target
China (Mainland)   1400
  • Tel:+86-10-6156.6641
  • Address:Suite 2-E051, BPE, No.1 NongLin Rd., FangShan, Beijing,

CAS No. 

1306-25-8 Cadmium telluride

CADMIUM TELLURIDE
China (Mainland)   2295
  • Tel:0086-531-58773055
  • Address:NO.59 Gongye South Road

CAS No. 

1306-25-8 Cadmium telluride

China (Mainland)   1100
  • Tel:86-022-60501184
  • Address:No. 3, Taiming Road, Industry Zone, Taihe Urban, Xiqing District
MSN:sctychemical@hotmail.com

CAS No. 

1306-25-8 Cadmium telluride

[1306-25-8]Cadmium telluride 99.99%
China (Mainland)   26
  • Tel:86-21-50316805
  • Address:Jinqiao Shanghai

CAS No. 

1306-25-8 Cadmium telluride

more information,pls contact with us!
United States  
  • Tel:1-(800)-2424-SPI
  • Address:569 East Gay Street West Chester, PA 19380

CAS No. 

1306-25-8 Cadmium telluride

CADMIUM TELLURIDE
United States  
  • Tel:727-826-5511
  • Address:1200 19th Street North St. Petersburg FL, 33713

CAS No. 

1306-25-8 Cadmium telluride

Germany  
  • Tel:+49 30 6392 6313
  • Address:Rudower Chaussee 29, D-12489 Berlin, Germany

CAS No. 

1306-25-8 Cadmium telluride

United States  
  • Tel:+1-303-423-9770
  • Address:17400 Hwy. 72 Arvada, CO 80007

CAS No. 

1306-25-8 Cadmium telluride

Hong Kong   8
  • Tel:86-23902293
  • Address:UNIT B, 1/F, CHEONG SHING IND. BLDG., 17 WALNUT ST., TAI KOK TSUI, KLN, HONG KONG

CAS No. 

1306-25-8 Cadmium telluride

China (Mainland)   6
  • Tel:86-531-88032799
  • Address:11/F,Sangqing Fengrun BLDG,South gongye Road No.100.
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    Reference

    Solar cells
    Solar cells. (Agency of Industrial Sciences and Technology, Japan). Jpn. Kokai Tokkyo Koho JP 58118171 A2 14 Jul 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L031-04. APPLICATION: JP 82-630 7 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) A Cd-Te compd. or mixt. is coated on a CdS layer or a semiconductor layer contg. CdS on a base, baked at 610-645° for 30-120 min to prep. a CdTe layer, and supplied with electrodes to prep. a solar cell. Thus, a CdS-CdCl2-propylene glycol paste was coated on a glass base and baked, a CdCl2-propylene glycol paste was coated on the CdS layer, and then a paste contg. CdTe was applied and baked. The CdTe layer was further coated with a C paste contg.There are some commonly used reagents with their cas registry numbers 1306-25-8 and 1306-23-6 in this article. an acceptor and baked at 640° to prep. solar cells which degraded by 5.5% after 3-mo storage vs. 29% for cells whose coatings were baked at lower (600°) temps. .
    Solar cells
    Solar cells. (Agency of Industrial Sciences and Technology, Japan). Jpn. Kokai Tokkyo Koho JP 58118170 A2 14 Jul 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H01L031-04. APPLICATION: JP 82-629 7 Jan 1982. DOCUMENT TYPE: Patent CA Section: 52 (Electrochemical, Radiational, and Thermal Energy Technology) A paste contg. a Cd-Te compd. or powd.Several reagents with their cas registry numbers 1306-25-8 and 1306-23-6 are used here. mixt. is coated on a CdS layer or a semiconductor layer contg. CdS on a base, sintered, and supplied with electrodes to prep. a solar cell. The paste is prepd. in H2O contg. a thickener. Thus, a CdS-CdCl2-propylene glycol paste was coated on a glass base and baked, a paste contg. CdTe was coated on the CdS layer and baked, and then a C layer contg. an acceptor was formed to prep. a solar cell having a conversion efficiency of 6.2% vs. ~5.0% for a cell prepd. with a CdTe-propylene glycol paste. .

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