Reference

Temperature-resistant photoresist composition

Temperature-resistant photoresist composition. Cernigliaro, George; Shipley, Charles R., Jr.In this study， 111-96-6 and 131-55-5 are also used. (Shipley Co., Inc., USA). Ger. Offen. DE 3309222 A1 22 Sep 1983, 52 pp. (German). (Germany). CODEN: GWXXBX. CLASS: IC: G03C001-72; G03F007-08; G03F007-26; C08L025-18; C08K005-28; H01L021-312. APPLICATION: DE 83-3309222 15 Mar 1983. PRIORITY: US 82-357971 15 Mar 1982. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 74 Pos. photoresists for the fabrication of semiconductor devices at high temps. (e200°) during reactive-ion etching, plasma etching, and ion implanting consist of a high-temp. diazo-compd. sensitizer, a binder contg. a polymeric resin from vinyl and phenol with a flow point which is nearly the same as that of the initiation of the reaction between the resin and the diazo compd. Thus, a sensitizer 22%, prepd. by the condensation reaction of naphthoquinone-1,2-diazide-5-sulfonic acid chloride and 2,2',4,4'-tetrahydroxybenzophenone, a poly(vinyl phenol) resin 78% in a Me cellulose acetate solvent was spin coated on glass, dried at 100°, exposed through a Cr photomask, and acid developed to give a photoresist mask which withstood temps. of 200-250° for nearly an hours operation. .

Solid state TV camera color filter elements

Solid state TV camera color filter elements. (Hitachi, Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 57207492 A2 20 Dec 1982 Showa, 5 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: H04N009-04; C08F002-46; H01L027-14.In this article, certain chemicals are used. Some of their cas registry numbers are 25067-05-4 and 131-55-5 APPLICATION: JP 81-92298 17 Jun 1981. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) In the formation of a color filter pattern directly on a support for the prepn. of a solid state TV camera element, the reflecting or scattering light from the support is reduced by forming on the support a radiation sensitive org. polymer (e.g., glycidyl methacrylate polymer) sublayer which is patternwise exposed and processed to remove the unwanted part to form a desired pattern and then soaked in a soln. contg. a light-absorbing agent (e.g., 2,2',4,4'-tetrahydroxybenzophenone). .