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Detail of "1315-11-3"

  • CAS Number:
  • 1315-11-3
  • Name:
  • Zinc telluride (ZnTe)

  • Molecular Structure:
  • Formula:
  • TeZn
  • Molecular Weight:
  • 192.99
  • Deleted CAS:
  • 162410-92-6
  • Synonyms:
  • Zincmonotelluride;Zinc telluride;
  • Density:
  • 6.34 g/mL at 25 °C(lit.)
  • Melting Point:
  • 1240°C
  • Hazard Symbols:
  • ToxicT
  • Risk Codes:
  • 23/25-25
  • Safety:
  • 36/37/39-45 Details

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CAS No.1315-11-3 Zinc telluride (ZnTe)Competitive Product

  Appearance:5N, -100 mes...

Zinc telluride (ZnTe) 1315-11-3, Zinc selenide (ZnSe) 1315-09-9, ---- Zinc cadmium telluride (ZnxCd1-xTe)

Supplier:Beijing Cerametek Materials Co. Ltd. [ China (Mainland)]

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CAS No.1315-11-3 Zinc telluride (ZnTe)

zinc telluride

Supplier:tianjin xintaimei chemical co, ltd. [ China (Mainland)]

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1585Integral
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Tel:86- 022-60501183

Address:Tianjin

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Reference

Band structure calculations of cubic metals, elementary semiconductors and semiconductor compounds with spin-orbit interaction
Band structure calculations of cubic metals, elementary semiconductors and semiconductor compounds with spin-orbit interaction. Masovic, D.Some chemicals with cas registry numbers like 1315-11-3 are also used. R.; Vukajlovic, F. R. (Lab. Theor. Phys., Boris Kidric Inst. Nucl. Sci., Belgrade, Yugoslavia). Comput. Phys. Commun., 30(2), 207-17 (English) 1983. CODEN: CPHCBZ. ISSN: 0010-4655. DOCUMENT TYPE: Journal CA Section: 65 (General Physical Chemistry) The described computer program (SPINORB, written in FORTRAN), for calcg. energy band structures of metals, elementary semiconductors, and semiconductor compds. with spin-orbit interaction included, is based on pseudopotential theory, the double-expansion method (M. and V., 1981), the Brust modification of the Lowdin perturbation method, and the analytic form of the electronic wave function in the atoms. Calcns. of the energy bands of ZnTe are given. .
High resolution electron microscopy of II-VI compound semiconductors
High resolution electron microscopy of II-VI compound semiconductors. Sinclair, R.; Ponce, F. A.; Yamashita, T.; Smith, David J. (Dep. Mater. Sci. Eng., Stanford Univ., Stanford, CA 94305, USA). Conf. Ser. - Inst. Phys., 67(Microsc.Several substances with their cas registry numbers 1306-23-6 and 1315-11-3 may be metioned in this study. Semicond. Mater.), 103-8 (English) 1983. CODEN: IPHSAC. ISSN: 0305-2346. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 The semiconductors CdTe, ZnTe, and ZnSe, as well as CdS grown on CdTe, were studied by high-resoln. electron microscopy at 100, 200, and 500 kV. A variety of extrinsic and intrinsic stacking faults were obsd., and dislocation Burgers vectors were detd. directly from exptl. images. .
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