Reference

Tellurium-related trap levels in silicon

Tellurium-related trap levels in silicon. Hofmann, K.; Schulz, M. (Inst. Angew. Phys., Univ. Erlangen-Nuernberg, Erlangen D-8520, Fed. Rep. Ger.). Appl. Phys. A, A33(1), 19-24 (English) 1984. CODEN: APSFDB. ISSN: 0721-7250. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Te-related defects in n-Si were analyzed by deep-level transient spectroscopy (DLTS). The Te doping of the samples was performed by ion implantation or during epitaxy. In all the samples, a level having a thermal activation energy (EA) ~0.3 eV is obsd. This activation energy depends on the elec. field. Taking into account the Poole-Frenkel (FP) effect and a temp. dependence proportional to T-2 in the capture cross section, a value of EA = 0.41 eV is obtained. A 2nd Te-related level having an activation energy of EA = 0.14 eV without correction of the FP effect is obsd. in the implanted samples. The same concn. is obsd. for the 2 levels in the implanted samples, thus indicating that both peaks in the DLTS spectra are caused by the identical Te-related defect.

Gmelin Handbook of Inorganic Chemistry: Sn-Organotin Compounds, Pt

Gmelin Handbook of Inorganic Chemistry: Sn-Organotin Compounds, Pt. 10: Mono- and Diorganotin-Sulfur Compounds. Organotin-Selenium and Organotin-Tellurium Compounds. 8th Ed. (Gmelin Institute of Inorganic Chemistry, USA). (Springer-Verlag: New York, N. Y.), 352 pp. $397.20. (English) 1983. DOCUMENT TYPE: Book CA Section: 29 (Organometallic and Organometalloidal Compounds) Abstract Unavailable