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Detail of "13708-63-9"

  • MSDS Download
  • CAS Number:
  • 13708-63-9
  • Name:
  • Terbium fluoride (TbF3)

  • Superlist Name:
  • Terbium trifluoride
  • Molecular Structure:
  • Formula:
  • TbF3
  • Molecular Weight:
  • 215.92
  • Synonyms:
  • Terbiumfluoride;Terbium trifluoride;Terbium(III) fluoride;
  • EINECS:
  • 237-247-0
  • Melting Point:
  • 1172 ºC
  • Boiling Point:
  • 19.5 °C at 760 mmHg
  • Solubility:
  • insoluble in water
  • Hazard Symbols:
  • HarmfulXn ; ToxicT
  • Risk Codes:
  • 20/21/22-36/37/38
  • Safety:
  • 9-26-36/37 Details
  • Transport Information:
  • UN 3288 6.1/PG 3

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CAS No.13708-63-9 Terbium trifluoride

  Appearance:2N-4N, mm gr...  Package:5kg-100kg

Terbium fluoride (TbF3) 13708-63-9,

Supplier:Beijing Cerametek Materials Co. Ltd. [ China (Mainland)]

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CAS No.13708-63-9 Terbium trifluoride

Assay:99%-99.999%  Appearance:White  Package:50KGs Iron D...  Application:and has impo...

Supplier:Changsha Easchem Co.,Limited [ China (Mainland)]

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CAS No.13708-63-9 Terbium trifluoride

Terbium Fluoride Formula TbF3 CAS No. 13708-63-9 Molecular Weight 215.92 Appearance White Solubility Insoluble in water, moderately soluble in strong mineral acids Stability Slightly hygroscopic Purity 99-99.999%, Uses Terbium Fluoride is used in special lasers and as a

Supplier:A&C Rare Earth Materials Center [ China (Mainland)]

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CAS No.13708-63-9 Terbium trifluoride

TERBIUM FLUORIDE

Supplier:Fisher Scientific UK [ United Kingdom]

610Integral
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Tel:+44 1509 231166

Address:Bishop Meadow Road, Loughborough, Leicestershire, LE11 5RG

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Reference

Stimulable phosphors and radiographic image conversion panels
Stimulable phosphors and radiographic image conversion panels. Umemoto, Chuki (Fuji Photo Film Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 61264084 A2 21 Nov 1986 Showa, 11 pp. (Japan) CODEN: JKXXAF. CLASS: ICM: C09K011-61. ICS: G21K004-00. APPLICATION: JP 85-106752 17 May 1985. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Section cross-reference(s): 73 Phosphors of the formula MFX.aNaX1.bLnX32:xEu2+ (M = Ba, Ca, Sr; X, X1 = Cl, Br, I; X2 = F, Cl, Br, I; Ln = Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu; 0 < a £ 2; 0 < b £ 5 ′ 10-2; 0 < x £ 0.2) and radiog. image intensification screens contg. the phosphors as stimulable phosphors are claimed. The phosphors exhibit improved emission characteristics and very low residual emission (i.e. very low emission after the latent images are erased) and hence the phosphors improve the quality of radiog. 13708-63-9 and 13569-80-7 are just another two chemicals used in this study. images. .
Electroluminescence of silicon oxide (SiOx)-LnF3 thin films
Electroluminescence of silicon oxide (SiOx)-LnF3 thin films. Vlasenko, N. A.; Denisova, Z. L.; Khomchenko, V. S. (Inst. Semicond., Kiev 252 650, USSR). Phys. Status Solidi A, 81(2), 657-60 (English) 1984. CODEN: PSSABA. ISSN: 0031-8965. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) The characteristics of the electroluminescence (EL) 1st obsd. in SiOx-LnF3 films are reported. Ln dopants such as Tb, Eu, Sm, Tm, Dy were used. The EL films were deposited by vacuum evapn.; their thickness was 0.3 - 1 mm. There were no dielec. layers between the EL films and electrodes (In2O3 and Al). The emission spectra show a series of broad lines which are typical for Ln3+ ions. The highest brightness (u103 cd/m2 at 300 K) was obtained with TbF3 doped films. 13765-25-8 and 13708-63-9 which are cas registry numbers of substances are two of reagents here. From an anal. of EL and elec. characteristics, it is concluded that the EL mechanism is an impact excitation of Ln3+ ions or the LnF3 complexes. Electrons taking part in this process are injected from the electrodes, the injection mechanism at 300 K is the thermionic emission. .
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