Reference

Comparative study of Cu-precursors for 3D focused electron beam induced deposition

Comparative study of Cu-precursors for 3D focused electron beam induced deposition. Luisier, A.; Utke, I.; Bret, T.; Cicoira, F.; Hauert, R.; Rhee, S.-W.; Doppelt, P.; Hoffmann, P. (Institute of Imaging and Applied Optics, School of Engineering, Swiss Federal Institute of Technology, Lausanne-EPFL CH-1015, Switz.). Proceedings - Electrochemical Society, 2003-8(Chemical Vapor Deposition XVI and EUROCVD 14, Volume 2), 1318-1326 (English) 2003 Electrochemical Society. CODEN: PESODO. ISSN: 0161-6374. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The copper precursors Bis-hexafluoroacetylacetonato-copper Cu(hfac)2, Vinyl-Trimethyl-Silane-copper(I)-hexafluoroacetylacetonate (hfac)Cu(VTMS), 2-Methyl-1-Hexen-3-yne-copper-hexafluoroacetylacetonate (hfac)Cu(MHY), and Dimethylbutene-copper(I)-hexafluoroacetylacetonate (hfac)Cu(DMB) are compared with respect to deposition rates and metal content obtained by focused electron beam induced deposition. Exposure was performed with 25 keV electrons in a Cambridge S100 scanning electron microscope equipped with a lithog. system. The tip deposition rates increase with increasing precursor vapor pressure, i.e. increasing precursor flux and range between 45 nm/s for (hfac)CuDMB to about 4 nm/s for Cu(hfac)2. A decay of deposition rates with time, i.e. the tip length is obsd. Elec. 4-point measurements indicate an insulating behavior of deposited lines for all precursors. In contrast, Cu contents of up to 45-60 at.% were found by Auger electron spectroscopy in thin rectangular deposits using (hfac)CuDMB and (hfac)CuVTMS as precursors. 244188-25-8 and 7440-44-0 are just another two chemicals used in this study. A discussion in terms of FEB dissocn. efficiency and precursor stability is presented. .