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Detail of "13765-44-1"

  • CAS Number:
  • 13765-44-1
  • Name:
  • Silyl

  • Molecular Structure:
  • Formula:
  • H3Si
  • Molecular Weight:
  • 0
  • Synonyms:
  • Siliconhydride (SiH3) (7CI); Silicon trihydride; Silicon trihydride radical; Silyl(SiH3); Silyl radical
  • Density:
  • g/cm3
  • Boiling Point:
  • °Cat760mmHg
  • Flash Point:
  • °C

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Reference

Reactions of organosilicon anionic species with nitrous oxide
Reactions of organosilicon anionic species with nitrous oxide. DePuy, Charles H.; Damrauer, R. (Chem. Dep., Univ. Colorado, Boulder, CO 80309, USA). Organometallics, 3(3), 362-5 (English) 1984. CODEN: ORGND7. ISSN: 0276-7333. DOCUMENT TYPE: Journal CA Section: 29 (Organometallic and Organometalloidal Compounds) Section cross-reference(s): 22 The flowing afterglow technique has been used to study the chem. of several anionic organosilicon species. In particular, silyl anions, Si-stabilized carbanions, and pentacovalent Si anions have been investigated. Because certain of the species studied were isomeric and indistinguishable by our mass spectroscopic detection system, chem. methods were developed to det. the structure of these isomeric anions. This was commonly accomplished by using reaction with nitrous oxide. 88036-00-4 and 107-46-0 are just another two chemicals used in this study. Silyl anions react with N2O to form siloxides by O atom transfer, Si-stabilized carbanions also react to form siloxides, but with loss of C, and pentacoordinate Si anions do not react. .
Silyl-modified high-density polyethylene laminates
Silyl-modified high-density polyethylene laminates. (Showa Electric Wire and Cable Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 58166047 A2 1 Oct 1983 Showa, 3 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: IC: B32B027-32; B32B027-10; B32B027-28. ICA: H01B017-60. APPLICATION: JP 82-50419 29 Mar 1982.Several reagents with their cas registry numbers 24937-78-8 and 9002-88-4 are used here. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) Section cross-reference(s): 43 In the lamination of high-d. silyl-modified polyethylene (I) [9002-88-4] film with paper for elec. insulators, bonding strength is improved by sandwiching low-d. I or silyl-modified ethylene-vinyl acetate copolymer (II) between the film and the paper. Thus, a (wt. ratio) mixt. of a compn. contg. I 100, trimethoxyvinylsilane 5, and dicumyl peroxide 0.2 part and a mixt. of 100 parts high-d. polyethylene and 0.5 part Bu2Sn dilaurate was melt extruded. The extrudate was laminated with an extrudate contg. II and ethylene-vinyl acetate copolymer [24937-78-8], crosslinked in H2O, drawn 200-300%, and pressed with kraft paper at 110-120° to give an elec. insulating laminate having high bonding strength. .
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