Detail of "144317-44-2"

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Studies of consequences of photoacid generator leaching in 193 nm immersion lithography

All Rights Reserved. Studies of consequences of photoacid generator leaching in 193 nm immersion lithography. Liberman, V.; Switkes, M.; Rothschild, M.; Palmacci, S. T.; Grenville, A.Some commonly used reagents like 144317-44-2 and 7440-21-3 are used in this experiment. (Lincoln Lab., Massachusetts Institute of Technology, Lexington, MA 02420, USA). Proceedings of SPIE-The International Society for Optical Engineering, 6154(Pt. 1, Optical Microlithography XIX), 615416/1-615416/12 (English) 2006 SPIE-The International Society for Optical Engineering. CODEN: PSISDG. ISSN: 0277-786X. DOCUMENT TYPE: Journal CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Leaching of resist components into the water has been reported in several studies. Potential effects of photoacid generator (PAG) dissolved in water include photocontamination of the last optical surface and the formation of particulate defects on the wafer surface. In order to det. the impact of these phenomena on lithog. performance, such as optics lifetime and yield, the authors have initiated a set of controlled studies, where predetd. amts. of PAG were introduced into pure water and the results monitored quant. One set of studies identified the complex, nonlinear paths leading to photocontamination of the optics. At concns. typical of leached PAG, below 500 ppb, the in-situ self-cleaning processes prevent contamination of the optics. On the other hand, initial expts. with a nano-dropper show that micron-scale particles from the dissolved PAG are formed on the wafer surface when water evaps. This phenomenon requires further systematic studies both at the fundamental science and the engineering levels. .

Acrylic polymers and radiation-sensitive resin compositions

Acrylic polymers and radiation-sensitive resin compositions. Fujiwara, Kouichi; Yamaguchi, Hiroshi; Nakamura, Atsushi (JSR Corporation, Japan).In this study， 831235-22-4 and 144317-44-2 are also used. PCT Int. Appl. WO 2005012374 A1 10 Feb 2005, 38 pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (Japanese). (World Intellectual Property Organization). CODEN: PIXXD2. CLASS: ICM: C08F220-28. ICS: G03F007-039; H01L021-30. APPLICATION: WO 2004-JP11143 4 Aug 2004. PRIORITY: JP 2003-286389 5 Aug 2003. DOCUMENT TYPE: Patent CA Section: 35 (Chemistry of Synthetic High Polymers) Section cross-reference(s): 76 Disclosed is a resist which is excellent in the soly. in a resist solvent and little dependent on baking temp. and can form developed patterns reduced in line edge roughness. Acrylic polymers having acid dissociative functional group comprise units of the general formula (I), units of general formula (II), and units of general formula (III) and/or units of general formula (IV), wherein R, R', R'' and R''' = hydrogen, Me, or trifluoromethyl; R1 is = hydrogen, linear or branched C1-4 alkyl, alkoxy, or linear or branched C1-4 fluoroalkyl; X = polycyclic C7-20 aliph. hydrocarbon group consisting of carbon atoms and hydrogen atoms; R2, R3 = linear or branched C1-4 alkyl; R4 = alicyclic C4-20 hydrocarbon group; R5 =linear or branched C1-4 alkyl; and R6, R7 = hydrogen or linear or branched C1-4 alkyl. .