Reference

Transparent amorphous sheets of crystallizable thermoplastic polymers of high viscosity, their manufacture and use

Transparent amorphous sheets of crystallizable thermoplastic polymers of high viscosity, their manufacture and use. Murschall, Ursula; Gawrisch, Wolfgang; Brunow, Rainer (Hoechst A.-G., Germany). Ger. Offen. DE 19528336 A1 6 Feb 1997, 15 pp. (German). (Germany). CODEN: GWXXBX. CLASS: ICM: C08L101-12. ICS: C08L067-02; C08L065-00; C08L045-00; C08K005-3475; C08K005-3492; C08J005-18; E04C002-54. ICA: C08J011-06. APPLICATION: DE 1995-19528336 2 Aug 1995. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) The sheets, with excellent optical and mech. properties, have a thickness of 1-20 mm, and the crystallizable polymer has a std. viscosity (SV, by DIN 53728) in Cl2CHCO2H of 1800-6000. Thus, a poly(ethylene terephthalate) (I) with SV 3490 (intrinsic viscosity 2.45 dL/g), moisture content <0.2%, polydispersity 4.23, glass temp. 82°, and cryst. m.p. 243° was dried by heating 5 h at 170°, extruded at 292°, and calendered to give a 3-mm-thick sheet with 94% transmittance, 100% clarity, notched Izod impact strength 4.6 kJ/m2, and d. 1.33 g/cm3. I with such properties may be prepd. 147315-50-2 and 103597-45-1 are just another two chemicals used in this study. by solid-state postpolymn. and may include particles of recycled I. When intended for outdoor use, the polymer will contain a UV stabilizer such as Tinuvin 1577, which is stable at ￡330°. .

Organic semiconductor FETs

Some chemicals with cas registry numbers like 3846-71-7 and 147315-50-2 are also used. Organic semiconductor FETs. Ueda, Hideaki (Minolta Camera Co., Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 2005005582 A2 6 Jan 2005, 7 pp. (Japanese). (Japan). CODEN: JKXXAF. CLASS: ICM: H01L051-00. ICS: H01L029-786; H01L029-80. APPLICATION: JP 2003-169360 13 Jun 2003. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) The title FETs contain, at least, connected org. semiconductor layers, source electrodes and drain electrodes, where the semiconductor layers contain 31 compds. of oxidn. preventive agents, optical stabilizers and UV radiation absorbers. Durability or oxidn. deterioration of the FETs can be reduced. .