Detail of "14781-45-4"

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CAS Number:
14781-45-4
Name:
Copper,bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-kO2,kO4)-, (SP-4-1)-
Molecular Structure:
Formula:
C10H2 Cu F12 O4
Molecular Weight:
477.65
Synonyms:
2,4-Pentanedione,1,1,1,5,5,5-hexafluoro-, copper deriv. (6CI); Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)-(7CI,8CI); Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-O,O')-,(SP-4-1)-; Copper, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato-kO,kO')-, (SP-4-1)- (9CI);Bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)copper (II);Bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II);Bis(hexafluoroacetoacetonato)copper(II); Bis(hexafluoroacetylacetonato)copper;Bis(hexafluoroacetylacetonato)copper(II);Bis(hexafluroroacetylacetonato)copper; Copper(II) bis(hexafluoroacetylacetonate);Copper(II) hexafluoroacetylacetonate
Density:
g/cm³
Melting Point:
97-99°C
Boiling Point:
220°C
Flash Point:
22.8°C
Hazard Symbols:
Risk Codes:
20/22
Safety:
Hazard Codes Xi
Risk Statements 20/22
Safety Statements 22-36/37
Hazard Note Irritant
TSCA No
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Supplier:Hangzhou Dayangchem Co., Ltd. [ China (Mainland)]

Verified-Platinum Supplier 4th Year Platinum
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Bis(hexafluoroacetylacetonato)copper(II) Hydrate

600 Integral
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Tel:021-34979012 13311639313

Address:shanghai

COPPER(II) HEXAFLUORO-2,4-PENTANEDIONATE

Supplier:TRUST&WE CO.,Ltd. [ China (Mainland)]

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Depositing metallic copper: Depositing metallic copper. Baum, Thomas Hall; Houle, Frances Anne; Jones, Carol Ruth (International Business Machines Corp. , USA). Eur. Pat. Appl. EP 135179 A1 27 Mar 1985, 7 pp. DESIGNATED STATES: R: CH, DE, FR, GB, IT, LI, NL, SE. (English). (European Patent Organization). CODEN: EPXXDW. CLASS: ICM: C23C016-18. ICS: C23C016-48. APPLICATION: EP 84-110261 29 Aug 1984. PRIORITY: US 83-533021 16 Sep 1983. DOCUMENT TYPE: Patent CA Section: 56 (Nonferrous Metals and Alloys) Section cross-reference(s): 76 Cu is deposited on substrates by confining the vapor of a fluorinated org. Cu compd. in an enclosed chamber, and decompg. the compd. by subjecting it to light. The resulting Cu coatings are useful for semiconductor devices. Thus, a Cu coating was formed on quartz by using light from an Ar laser (wavelength of 457-515 nm) in an atm. of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate-copper(II) [14781-45-4] at room temp. and ambient pressure.

Photochemical generation and deposition of copper from a gas phase precursor: Photochemical generation and deposition of copper from a gas phase precursor. Jones, C. R.; Houle, F. A.; Kovac, C. A.; Baum, T. H. (IBM Res. Lab., San Jose, CA 95193, USA). Appl. Phys. Lett., 46(1), 97-9 (English) 1985. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 56 (Nonferrous Metals and Alloys) Section cross-reference(s): 74 Bis(1,1,1,5,5,5-hexafluoropentanedionato)copper(II) [14781-45-4] vapor was irradiated at <300 nm for the photochem. generation and deposition of Cu metal. Pulsed and continuous UV sources were used to induce the deposition, esp. in the presence of EtOH vapor as a coreductant for the coordination complex. The Cu films contained C, O, and F.