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Detail of > 152894-10-5

  • MSDS Download
  • CAS Number:
  • 152894-10-5
  • Name:
  • Ethanesulfonamide,1,1,2,2,2-pentafluoro-N-[(1,1,2,2,2-pentafluoroethyl)sulfonyl]-

  • Superlist Name:
  • N,N-Bis(pentafluoroethanesulphonyl)imide
  • Formula:
  • C4HF10NO4S2
  • Molecular Structure:
  • Synonyms:
  • Ethanesulfonamide,1,1,2,2,2-pentafluoro-N-[(pentafluoroethyl)sulfonyl]- (9CI);Bis(pentafluoroethanesulfonyl)amine;Bis(pentafluoroethanesulfonyl)imide;Bis(pentafluoroethylsulfonyl)imide;Bis(perfluoroethanesulfonyl)imide;N,N-Bis(pentafluoroethanesulphonyl)imide;1,1,2,2,2-pentafluoro-N-[(pentafluoroethyl)sulfonyl]ethanesulfonamide;ethanesulfonamide, 1,1,2,2,2-pentafluoro-N-[(1,1,2,2,2-pentafluoroethyl)sulfonyl]-;Ethanesulfonamide, 1,1,2,2,2-pentafluoro-N-[(pentafluoroethyl)sulfonyl]-;2-Fluoro-6-nitrophenol;
  • Molecular Weight:
  • 381.17
  • Density:
  • 1.905 g/cm3
  • Melting Point:
  • 40 °C
  • Boiling Point:
  • 223.12 °C at 760 mmHg
  • Flash Point:
  • 88.74 °C
  • Hazard Symbols:
  • IrritantXi
  • Risk Codes:
  • 34
  • Safety:
  • 26-36/37/39Details
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CAS No. 

152894-10-5 N,N-Bis(pentafluoroethanesulphonyl)imide

N,N-Bis(pentafluoroethanesulphonyl)imide
China (Mainland)   3476
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CAS No. 

152894-10-5 N,N-Bis(pentafluoroethanesulphonyl)imide

Ethanesulfonamide,1,1,2,2,2-pentafluoro-N-[(1,1,2,2,2-pentafluoroethyl)sulfonyl]-
China (Mainland)   2662
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CAS No. 

152894-10-5 N,N-Bis(pentafluoroethanesulphonyl)imide

China (Mainland)   2760
  • Tel:+86-15383391676
  • Address:shijiazhuang
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CAS No. 

152894-10-5 N,N-Bis(pentafluoroethanesulphonyl)imide

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CAS No. 

152894-10-5 N,N-Bis(pentafluoroethanesulphonyl)imide

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    Reference

    Photosensitive compositions
    Photosensitive compositions. Brzozowy, David; Thomas, Kocab J.; Hatfield, John P.; Ferreira, Lawrence; Blakeney, Andrew (Arch Specialty Chemicals, Inc., USA). PCT Int. Appl. 152894-10-5 and 640724-15-8 are cas registry numbers. These chemicals are also mentioned in this article. WO 2004002955 A2 8 Jan 2004, 51 pp. DESIGNATED STATES: W: JP, KR, SG; RW: AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR. (English). (World Intellectual Property Organization). CODEN: PIXXD2. CLASS: ICM: C07D. APPLICATION: WO 2003-US21031 19 Jun 2003. PRIORITY: US 2002-PV391850 26 Jun 2002. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Section cross-reference(s): 38, 76 Radiation sensitive compns. for use in producing a patterned image on a substrate comprise: (1) a first photoacid generator (PAG) compd. P1, which comprises one or more compds. of RxM+N(SO2R1)SO2R2 ( RxM+ = R3R4R5S+ or I; R1,2 = C1-C12 fluoroalkyl, together R1,2 are joined with the N to form a (F2C)yN ring where y = 4-12; R3-5 = unsubstituted aryl, alkyl, alpha-ketomethyl groups and such groups substituted with an acid sensitive group; or R3 and R4 together with the S atom form a cycloalkylsulfonium ring; R6-11 and R6'-11' = alkyl, alkoxy, halogen, hydrogen, OCO2G, OCH2CO2G, or OG where G = an acid sensitive group); (2) a second photoacid generator compd. P2 which comprises one or more compds. of R12S(=O)(=O)C(=N2)S(=O)(=O)R12 (R12 = linear, cyclic, or branched C1-C8 fluoroalkyl, Ph, naphthalene, C6-C12 cyclic or alicyclic hydrocarbon, C1-C8 alkyl group); and (3) a polymer component comprising an alkali sol. resin component whose alkali soly. is suppressed by the presence of acid sensitive moieties and whose alkali soly. is returned by treatment with an acid and, optionally, heat; Wherein said polymer comprises one or more polymers comprising the monomer unit II (R13 = H, C1-C4 lower alkyl, CN, or CH2CO2R20; R14,15 = H, C1-C4 alkyl, or halogen; R16 = H, C1-C4 alkyl; R17 = Ph, C1-C20 alkyl, optionally contg. an ether or ester group, phenalalkylene etc.); and (4) a solvent. .

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