Reference

Deposition method of ternary films

All Rights Reserved. Deposition method of ternary films. Dussarrat, Christian; Yanagita, Kazutaka; Gatineau, Julien (L'Air Liquide, Societe Anonyme a Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude, Fr.). PCT Int. Appl.Several reagents with their cas registry numbers 15112-89-7 and 1624-01-7 are used here. WO 2007000186 A1 4 Jan 2007, 41pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (English). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2005-EP8196 29 Jun 2005. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 This invention describes a method for producing a metal-contg. film by introducing a metal source which does not contain metal-C or metal-N-C s-bonds (for example, TaCl5×SEt2), a Si precursor (for example, SiH(NMe2)3 or (SiH3)3N), a nitrogen precursor such as NH3, a C source such as monomethylamine or ethylene and a reducing agent (for example, H2) into a CVD chamber and reacting those at the surface of a substrate to produce metal contg. films in a single step. .