Detail of "166301-45-7"

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The effect of thin film scaling on the capacitance versus voltage characteristic of a ferroelectric memory cell: Gregory, J. W.; Cuchiaro, J. D.; Araujo, C. A.; McMillan, L. M. (Symetrix Corporation, Colorado Springs, CO 80918, USA). Integr. Ferroelectr., 6(1-4), 281-8 (English) 1995. CODEN: IFEREU. ISSN: 1058-4587. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 57 The effects on the capacitance vs. voltage (CV) measurement from reducing the film thickness of Symetrix Y-1 ferroelec. material will be presented. The effects on the zero bias capacitance, coercive voltage and coercive elec. field as a function of film thickness will also be presented. Obtained CV data was compared to data obtained from hysteresis measurements. The films were fabricated with a spin-on method and the thicknesses of the films were 1741, 2592, 3321, and 4050 ?. The zero voltage capacitance showed a linear relation as a function of film thickness and a change in the dielec. const. for films >2500 ?. A simple circuit model suggests the enhancement of the dielec. const.Some commonly used reagents like 166301-45-7 is used in this experiment. for the thin films may be caused by the space charge regions. .