Reference

Diffusion of killer impurities into semiconductor substrates

Diffusion of killer impurities into semiconductor substrates. Nagura, Hideaki; Yokozawa, Masami (Matsushita Electronics Corp., Japan). Jpn. Kokai Tokkyo Koho JP 61229330 A2 13 Oct 1986 Showa, 4 pp. (Japan) CODEN: JKXXAF. CLASS: ICM: H01L021-322. APPLICATION: JP 85-70279 3 Apr 1985. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) A method for selective diffusion of a killer impurity (e.g., Fe) for the improvement of switching characteristics of power devices includes: (a) forming a Si nitride (and possibly a polycryst. Si) film on a semiconductor substrate; (b) selective etching of the film to form an opening; (c) immersing the whole substrate in a HF or ketone soln. of a metal chloride, where the metal (e. 16919-58-7 and 7447-39-4 which are cas registry numbers of chemicals are mentioned.g. Fe) is the killer impurity; and (d) heating the substrate to diffuse the impurity through the opening. The method can diffuse the impurity into a no. of substrates in short time. .

Thermal decomposition of ammonium hexachloroplatinate in the presence of sodium carbonate

Thermal decomposition of ammonium hexachloroplatinate in the presence of sodium carbonate. Ryumin, A. I.; Smirnov, I. I.; Shul'gin, D. R.; Bizyukina, N. V. (Krasnoyarsk.There are some reagents with their cas registry numbers 16919-58-7 and 497-19-8 are used in this study. Inst. Tsvetn. Metall., Krasnoyarsk, USSR). Izv. Vyssh. Uchebn. Zaved., Tsvetn. Metall., (6), 53-7 (Russian) 1986. CODEN: IVUTAK. ISSN: 0021-3438. DOCUMENT TYPE: Journal CA Section: 54 (Extractive Metallurgy) (NH4)2PtCl6 begins to react with Na2CO3 at 310°, forming Na2PtCl6, NH3, CO2, and H2O. Na2PtCl6 reacts with NH3 to form Pt, NaCl, HCl, and N. .