Reference

Recovery and reclamation of platinum-iridium and palladium-iridium alloy scrap

Recovery and reclamation of platinum-iridium and palladium-iridium alloy scrap. Ceng, Huanxing (Dep. Appl. Chem., Chin. Univ. Sci. Technol., Hefei, Peop. Rep. China). Huaxue Shijie, 25(10), 388-90 (Chinese) 1984. CODEN: HUAKAB. ISSN: 0367-6358. DOCUMENT TYPE: Journal CA Section: 54 (Extractive Metallurgy) Section cross-reference(s): 60 Metal is recovered from Pt-Ir and Pd-Ir alloy scrap. Pd and Ir are sepd. by a (NH4)2Cl-soly. method using the difference in the soly. and thermal stability between (NH4)2PdCl6 [19168-23-1] and (NH4)2IrCl6 [16940-92-4]. Sponge Pd and Ir are produced in the process by thermal decompn. in vacuum.

Iridium oxide powder, process for producing the same, and paste containing the same for thick film resistor

All Rights Reserved. Iridium oxide powder, process for producing the same, and paste containing the same for thick film resistor. Maeda, Toshiki; Makuta, Fujio; Okabe, Yoshihiro (Sumitomo Metal Mining Co., Ltd., Japan). PCT Int. Appl. WO 2007020865 A1 22 Feb 2007, 15pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (Japanese). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2006-JP315811 10 Aug 2006.There are some reagents with their cas registry numbers 12645-46-4 and 16940-92-4 are used in this study. PRIORITY: JP 2005-236336 17 Aug 2005. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) An iridium oxide powder which, when used as a conductive powder for thick film resistors, gives a paste in which the powder has satisfactory dispersibility. By burning the paste, a resistor having satisfactory elec. properties can be formed. Also provided are: a process for industrially inexpensively producing the iridium oxide powder; and a paste for thick film resistors which contains the iridium oxide powder. The process for iridium oxide powder prodn. is characterized in that ammonium hexachloroiridate(IV) contg. a potassium ingredient in an amt. of 0.02-0.3 wt.% based on the whole is roasted in an oxidizing atm. at 700-1,000°C. By the process, an iridium oxide powder is obtained which contains potassium in an amt. of 0.03-0.2 wt.% based on the whole and iridium metal in an amt. of 3 wt.% or smaller based on the whole, has a structure consisting of an iridium-oxide phase only or comprising an iridium oxide phase and an iridium metal phase, and has an av. particle diam. of 20-100 nm. .