Reference

Aluminum with chemical conversion layer for electrophotographic photoreceptor and its production

Aluminum with chemical conversion layer for electrophotographic photoreceptor and its production. Shiraki, Hiroshi; Tada, Kiyoshi (Showa Denko K. K., Japan). Jpn. Kokai Tokkyo Koho JP 2003027281 A2 29 Jan 2003, 6 pp.There are some reagents with their cas registry numbers 83-86-3 and 17439-11-1 are used in this study. (Japanese). (Japan). CODEN: JKXXAF. CLASS: ICM: C25D011-00. ICS: C25D015-02; G03G005-14. APPLICATION: JP 2001-214664 16 Jul 2001. DOCUMENT TYPE: Patent CA Section: 72 (Electrochemistry) Section cross-reference(s): 74 The invention relates to an Al plate with a chem. conversion layer, suited for use as a substate of an electrophotog. photoreceptor, thus the Al plate as a cathode is electrolyzed in the phytic acid-Ti based chem. conversion soln. contg. TiO2 particles. .

Method for growth of barium titanate thin film

Method for growth of barium titanate thin film. Li, Mingda; Liao, Xingzhi (Huabang Electronic Co., Ltd., Peop. Rep. China). Faming Zhuanli Shenqing Gongkai Shuomingshu CN 1377061 A 30 Oct 2002, 16 pp. (Chinese). (People's Republic of China). CODEN: CNXXEV. CLASS: ICM: H01L021-316. ICS: C04B035-622. APPLICATION: CN 2001-110117 27 Mar 2001. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) BaTiO3 film with high dielec. const. and low leakage current suitable for dielec. layer in capacitor for DRAM memories is described/. The method comprises liq.-phase deposition of BaTiO3 thin film on a chip at 25-95° in an aq. soln. contg. Ba(NO3)2 0.01-0.34M, hexafluorotitanic acid 2.00-6.10M, and H3BO3 0.10-0.90M.Except for chemicals metioned above, 10022-31-8 and 17439-11-1 are also used. .