Reference

Chemical vapor deposition process for obtaining zirconium nitride thin films

All Rights Reserved. Chemical vapor deposition process for obtaining zirconium nitride thin films. Reuter, Knud; Passing, Gerd; Younsoo, Kim; Harish, Parala; Fischer, Roland A. (H.C. Starck Gmbh & Co. KG, Germany). Eur. Pat. Appl. EP 1746183 A1 24 Jan 2007, 9pp. DESIGNATED STATES: R: AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR, AL, BA, HR, MK, YU. (German). (European Patent Organization). CODEN: EPXXDW. APPLICATION: EP 2006-14020 6 Jul 2006. PRIORITY: DE 2005-102005033579 19 Jul 2005. 175923-04-3 and 7440-67-7 which are cas registry numbers of chemicals are mentioned. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 75, 78 The invention concerns a procedure for producing zirconium nitride layers by CVD (chem. vapor deposition) from a reactive gas on a substrate surface. In the procedure, a tetrakis(dialkylamide) zirconium complex of the general formula Zr(NR1R2)4 is used as a precursor, whereby R1 and R2 are independently a straight-chain or branched C1-C4 alkyl group. A hydrazine deriv. of the general formula H2N-NR3R4 is used as a reactive gas, whereby R3 is a straight-chain or branched C1-C4 alkyl group and R4 is, independent of R3, a C1-C4 alkyl group or H. .