Reference

Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)2]4

All Rights Reserved. Intriguing conducting properties of HfOxNy thin films prepared from the Hf[N(C2H5)2]4. Chou, Yi-Hsuan; Chiu, Hsin-Tien; Kuo, Teng-Fang; Chi, Cheng-Chung; Chuang, Shiow-Huey (Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan). Applied Physics Letters, 89(25), 252901/1-252901/3 (English) 2006 American Institute of Physics. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Section cross-reference(s): 75 Hf nitride films were prepd. on the Si(100) substrates by the metal-org. chem. vapor deposition method using Hf[N(C2H5)2]4. The prepd. samples were then oxidized in air, followed by rapid-thermal annealing to produce HfOxNy thin films, meanwhile the assocd. phys. properties were investigated. The x-ray photoelectron spectroscope anal. unveiled that the compn. of the films is HfOxNy. 19824-55-6 and 37307-60-1 which are cas registry numbers of chemicals are mentioned. In addn., the films after the rapid-thermal annealing treatments at various temps. revealed salient features in their phys. properties, such as capacitance and cond. On this basis, the feasibility of using the HfOxNy layers as high-k dielecs. in complementary metal oxide semiconductor transistors was also discussed. .

Metal-organic chemical vapor deposition of HfO2 by alternating supply of tetrakis-diethylamino-hafnium and remote-plasma oxygen

Metal-organic chemical vapor deposition of HfO2 by alternating supply of tetrakis-diethylamino-hafnium and remote-plasma oxygen. Horii, Sadayoshi; Yamamoto, Kazuhiko; Asai, Masayuki; Miya, Hironobu; Kaneko, Isao; Ishihara, Toshinobu; Hayashi, Shigenori; Niwa, Masaaki (Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc., Toyama 939-2393, Japan). Japanese Journal of Applied Physics, Part 1: Regular Papers, Short Notes & Review Papers, 43(10), 6963-6967 (English) 2004 Japan Society of Applied Physics. CODEN: JAPNDE. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) HfO2 films were fabricated through an alternating supply process, which consisted of deposition using tetrakis-diethylamino-hafnium (TDEAHf:Hf(NEt2)4), followed by oxidn. using remote-plasma oxygen (RPO). Deposition rates depend on temp. (above 350°) and the supply duration of TDEAHf, which indicated a nonself-limiting growth mode.Several substances with their cas registry numbers 12055-23-1 and 19824-55-6 may be metioned in this study. XPS anal. revealed that as-deposited films fabricated by supplying only TDEAHf were unstable with the presence of carbon and nitrogen impurities, but these can be removed by supplying RPO. Sufficient supply durations of RPO produced stoichiometric HfO2 films accompanied by an efficient redn. in the leakage current of the films, but an excess RPO supply duration resulted in a larger equiv. oxide thickness (EOT) due to a decrease in the permittivity of the interfacial layer. By optimizing the supply durations of TDEAHf and RPO, a minimal EOT of 1.6 nm and a leakage current of 1 ′ 10-4 A/cm2 at -1 V relative to the flat-band voltage were achieved. .