Detail of "20219-33-4"
- CAS Number:
- 20219-33-4
- Name:
Tantalum (V) tetraethoxide 2,4-pentanedionate
- Molecular Structure:
- Formula:
- C13H27O6Ta
- Molecular Weight:
- 460.30
- Density:
- 1.5 g/cm3
- Melting Point:
- 45 °C
- Boiling Point:
- 95 °C at 0,5mm
- Flash Point:
- 95 °C / 0.5mm
- Risk Codes:
- 36/37/38
- Safety:
- 26-36/37/39 Details
Tantalum (V) tetraethoxide 2,4-pentanedionate
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Reference
- Supercritical fluid-assisted deposition of materials on semiconductor substrates
- Supercritical fluid-assisted deposition of materials on semiconductor substrates. Xu, Chongying; Baum, Thomas H.Several substances are used for example 11105-01-4 which is its cas registry number.; Korzenski, Michael B. (USA ). U.S. Pat. Appl. Publ. US 2004023453 A1 5 Feb 2004,15 pp., Cont.-in-part of U.S. Ser. No. 303,479. (English). (United States of America). CODEN: USXXCO. CLASS: ICM: H01L021-8238. NCL: 438202000. APPLICATION: US 2003-632009 31 Jul 2003. 20219-33-4 are also occured in this study. PRIORITY: US 2001-PV345738 31 Dec 2001; US 2002-303479 25 Nov 2002. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Supercrit. fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manuf. The deposition is effected using a supercrit. fluid-based compn. contg. the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes. ..