Reference

Single source mixtures of metal siloxides as chemical vapor deposition precursor

Single source mixtures of metal siloxides as chemical vapor deposition precursor. Clark, Robert D.; Hochberg, Arthur Kenneth (USA ). U.S. Pat. Appl. Publ. US 2004044163 A1 4 Mar 2004,7 pp. (English). (United States of America). CODEN: USXXCO. There are some commonly used reagents like 2172-02-3 in this article. CLASS: ICM: C08G077-00. NCL: 528010000. APPLICATION: US 2002-232052 30 Aug 2002. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) A metal siloxide or silyl-amide precursor mixt. has the empirical formula M(L1)x(L2)v-x, wherein M is a metal having a valence of from 2-6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0

In-situ atomic layer deposition of hafnia high-k dielectric films for semiconductor devices

All Rights Reserved. In-situ atomic layer deposition of hafnia high-k dielectric films for semiconductor devices. Dip, Anthony; Sasaki, Sadao; Toeller, Michael; Reid, Kimberly G. ( Tokyo Electron Limited; Tokyo Electron America, Inc., Japan). PCT Int. Appl. WO 2007019449 A1 15 Feb 2007, 46pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (English). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2006-US30735 4 Aug 2006. PRIORITY: US 2005-706173P 5 Aug 2005; US 2006-462234 3 Aug 2006. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Section cross-reference(s): 48, 75 An in situ method for forming a HfO2 high-k dielec.Several reagents such as 2172-02-3 is used here. layer in a batch wafer processing system. The method comprises 1st loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a 1st oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by at. layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a 2nd oxidizer and a Hf precursor. The Hf precursor is selected from Hf tert-butoxide or Hf tetra-diethylamide. .