Reference

Effective mass in the barriers of gallium arsenide/aluminum arsenide resonant tunneling double barrier diodes

Effective mass in the barriers of gallium arsenide/aluminum arsenide resonant tunneling double barrier diodes. Landheer, D.; Aers, G. C.; Wasilewski, Z. R. (Inst. Microstruct. Sci., Natl. Res. Counc. Canada, Ottawa, ON K1A 0R6, Can.). Superlattices Microstruct., 11(1), 55-9 (English) 1991. CODEN: SUMIEK. ISSN: 0749-6036. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The peak and valley currents were investigated for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1. 22831-42-1 and 1303-00-0 which are cas registry numbers of chemicals are mentioned.9-5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the G-G conduction band edge, a value for the strength, mb*Vb, of the AlAs barriers is 0.069 ± 0.01 eV and the effective mass mb = (0.068 ± 0.01) m0. .

Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic indium gallium arsenide (In0

Peak-to-valley current ratios as high as at room temperature in pseudomorphic indium gallium arsenide (In0.53Ga0.47As)/aluminum arsenide/indium arsenide resonant tunneling diodes. Smet, Jurgen H.; Broekaert, Tom P. E.; Fonstad, Clifton G. (Cent. Mater. Sci. Eng., Massachusetts Inst. Technol., Cambridge, MA 02139, USA). J. Appl. Phys., 71(5), 2475-7 (English) 1992. CODEN: JAPIAU. ISSN: 0021-8979. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with the highest peak-to-valley current ratios reported to date have been fabricated on InP substrates with mol. beam epitaxy. 1303-11-3 and 22831-42-1 are just another two chemicals used in this study. Peak-to-valley current ratios as high as at 300 K are obtained. The majority of the devices on the sample have a peak-to-valley current ratio of 42 at 300 K and 85 at 77 K. .