Detail of "24991-47-7"

Reference

Poly(4-chlorostyrene), a new high contrast negative E-beam resist

Poly(4-chlorostyrene), a new high contrast negative E-beam resist. Liutkus, J.; Hatzakis, M.; Shaw, J.; Paraszczak, J. (Thomas J. Watson Res. Cent., IBM, Yorktown Heights, NY 10598, USA). Polym. Eng. Sci., 23(18), 1047-9 (English) 1983. CODEN: PYESAZ. ISSN: 0032-3888. DOCUMENT TYPE: Journal CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Poly(4-chlorostyrene), a new high-contrast, neg.-working electron-beam resist, was prepd. by thermal free radical soln. polymn. and then fractionated by differential solvation techniques. Reactions occurring during polymn. and crosslink formation on irradn. are discussed. For mol. wts. of 700,000 and 300,000, resp. (same mol. wt. distribution), the sensitivity was 2 and 5 mC/cm2, while the contrast was 3.5 for both. This is the highest reported contrast for a polymeric neg. resist. The resist can then be UV hardened after development, and will not flow at 200°.Except for chemicals metioned above, 1073-67-2 and 24991-47-7 are also used. The RIE etch rate was ~1/2 that of PMMA in various plasmas. .

Poly(halostyrene) for negative resists

Poly(halostyrene) for negative resists. Hatzakis, Michael; Liutkus, John Joseph; Paraszczak, Jurij Rostyslav; Shaw, Jane Margaret (International Business Machines Corp. , USA). Eur.In this study， 24991-47-7 and 110-80-5 are also used. Pat. Appl. EP 93202 A1 9 Nov 1983, 18 pp. DESIGNATED STATES: R: DE, FR, GB. (English). (European Patent Organization). CODEN: EPXXDW. CLASS: IC: C08F012-16; G03F007-10. APPLICATION: EP 82-111811 20 Dec 1982. PRIORITY: US 82-373839 3 May 1982. DOCUMENT TYPE: Patent CA Section: 74 (Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes) Neg. (UV, x-ray, electron) resist for photomask or semiconductor device fabrication comprises a poly(halostyrene) having mol. wt. 105-106 and dispersivity D 1.5-2.5. Thus, a Si wafer (treated with hexamethyldichlorosilane) was coated with 11% cyclohexanone soln. of poly(4-chlorostyrene) (mol. wt. 680,000; D = 1.75) to give a 7000 ? film (after bake), prebaked at 160° for 15 min, imagewise exposed to electron beam radiation at a dose of 5 mC/cm2, developed in a soln. contg. Me iso-Bu ketone-2-ethoxyethanol (4:3) for 3 min, dipped in 2-ethoxyethanol for 30 s, sprayed with 2-ethoxyethanol for 5 s, and dried. .