Detail of "25583-20-4"

Reference

Residual stress in coated low-Z films of titanium carbide and titanium nitride: II

Residual stress in coated low-Z films of titanium carbide and titanium nitride: II. Correlation of residual stress with microstructure. Yoshizawa, Isao; Kabeya, Zensaburo; Kamada, Kohji (Inst. Plasma Phys., Nagoya Univ., Nagoya 464, Japan). J. Nucl. Mater., 123(1-3), 1315-19 (English) 1984. CODEN: JNUMAM. ISSN: 0022-3115. DOCUMENT TYPE: Journal CA Section: 71 (Nuclear Technology) Section cross-reference(s): 57 The correlations of the residual stresses with microstructures of TiC [12070-08-5] and TiN [25583-20-4] films deposited onto various substrates were examd. specimens with lower residual stress generally show sharp line profile and good sepn. between Ka1 and Ka2 diffraction peaks in both TiN and TiC films, indicating better cryst. perfection. Phys. vapor deposition coated TC films on Mo and Inconel substrates show poor sepn. of Ka1 and Ka2 peaks, namely due to higher residual stresses in comparison with those of chem. vapor deposition (CVD) coated TiN and TiC films on Mo or inconel substrate. In CVD TiC/Pocographite system, with film thickness ranging from 10 to 100 mm, the grain size increased with increasing the thickness, except for the 100 mm thick specimen which has the smallest grain size in this group. However, the sharpness of diffraction profile is best in 20 mm thick film, and worst in 100 mm thick film. This is in good correlation with the amt. of residual stress.

Method of etching multi-layered metal wiring in semiconductor device

Method of etching multi-layered metal wiring in semiconductor device. Baek, Gye Hyeon; Kim, Gil Ho; Park, Chang Uk (Hynix Semiconductor Inc., S. 25583-20-4 and 7782-50-5 are also occured in this study. Korea). Repub. Korean Kongkae Taeho Kongbo KR 2001064438 A 9 Jul 2001, No pp. given (Korean). (Korea, Republic Of). CODEN: KRXXA7. CLASS: ICM: H01L021-3213. APPLICATION: KR 1999-64635 29 Dec 1999. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) An etching method of multi-layered metal wiring is provided that reduces the thickness of a photosensitive film pattern for a metal wiring and improve the microloading effect by maintaining high etching ratios of aluminum in the photosensitive film and a titanium nitride film through reducing the bias power for aluminum etching. An anti-diffusion film, a metal film and an anti-reflective coating are layered in sequence as multi-layered metal wiring on a lower structure of a semiconductor substrate. A photoengraving is performed on the layered anti-reflective coating to form a photosensitive film pattern. A plasma etching process with activated Cl2+BCl3+N2 is performed to etch the anti-reflective coating with a high bias power. The bias power is reduced in the same plasma etching process to etch the metal film. The bias power is raised in the same plasma etching process to excessively etch the anti-diffusion film. The photosensitive film pattern is removed. .