Detail of "25817-87-2"

Reference

Electrically conductive substrates for patterning apparatus

Electrically conductive substrates for patterning apparatus. Mishima, Kazuhiko; Atari, Hitoshi (Kyocera Corp., Japan). Jpn. Kokai Tokkyo Koho JP 03060014 A2 15 Mar 1991 Heisei, 8 pp. (Japan). CODEN: JKXXAF. CLASS: ICM: H01L021-027. APPLICATION: JP 89-196313 27 Jul 1989. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) The elec. conductive substrates are sintered bodies comprising an Al compd.Chemicals with cas numbers 12070-14-3 and 25817-87-2 also play role. 0.1-10, 31 Group IIA or IIIB compd(s)., an elec. conductive material 0.5-10 wt.%, and SiC balance, and contg. ￡300-ppm Fe among unavoidable impurities. The planar level of the surface of the sintered bodies is ￡5 mm. .

Novel dielectric stack and method of making same

Novel dielectric stack and method of making same. Gealy, F. Daniel; Agarwal, Vishnu K. (USA ).In this study， 25817-87-2 and 7440-21-3 are also used. U.S. Pat. Appl. Publ. US 2004012043 A1 22 Jan 2004,14 pp. (English). (United States of America). CODEN: USXXCO. CLASS: ICM: H01L027-108. NCL: 257303000. APPLICATION: US 2002-197042 17 Jul 2002. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Disclosed herein are various novel dielec. stack combinations that may be used in integrated circuit devices, and various methods of making same. In one illustrative embodiment, a capacitor is provided which is comprised of a first conductive layer, a first dielec. layer formed above the first conductive layer, the first dielec. layer comprised of a material selected from the group consisting of hafnium silicate, zirconium silicate and aluminum silicate, a second dielec. layer formed above the first dielec. layer, the second dielec. layer comprised of a material selected from the group consisting of hafnium oxide, zirconium oxide and aluminum oxide, and a second conductive layer formed above the second dielec. layer. In another illustrative embodiment, a transistor is provided which is comprised of a gate electrode formed above a semiconducting substrate and a first and a second dielec. layer positioned between the substrate and the gate electrode, the second dielec. layer being positioned between the first dielec. layer and the gate electrode, the first dielec. layer being formed above the substrate and being comprised of a material selected from the group consisting of hafnium silicate, zirconium silicate and aluminum silicate, the second dielec. layer being comprised of a material selected from the group consisting of hafnium oxide, zirconium oxide and aluminum oxide. .