Detail of "30736-07-3"

Reference

Thermal chemical vapor deposition of silicon carbide films

Thermal chemical vapor deposition of silicon carbide films. Boeglin, Herman J. (Olin Corp., USA). PCT Int. Appl. WO 9201083 A1 23 Jan 1992, 12 pp. DESIGNATED STATES: W: AU, BB, BG, BR, CA, FI, HU, JP, KP, KR, LK, MC, MG, MW, NO, PL, RO, SD, SU; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, DE, DK, ES, FR, GA, GB, GR, IT, LU, ML, MR, NL, SE, SN, TD, TG. (World Intellectual Property Organization). CODEN: PIXXD2. CLASS: ICM: C23C016-32. ICS: C23C016-46. APPLICATION: WO 91-US4656 1 Jul 1991. PRIORITY: US 90-533919 13 Jul 1990. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Section cross-reference(s): 76 SiH2(tert-Bu)2 vapor is introduced into a CVD reaction zone contg. a substrate; the temp. of the zone and substrate is kept at 400-1100° and the pressure at 0.1-10 torr; and the vapor is passed into contact with the substrate for a period of time sufficient to form a Si carbide film.Except for chemicals metioned above, 30736-07-3 and 409-21-2 are also used. .

Plasma chemical vapor deposition of silicon carbide films

Plasma chemical vapor deposition of silicon carbide films. Boeglin, Herman J. (Olin Corp.In this study， 409-21-2 and 30736-07-3 are also used., USA). U.S. US 5061514 A 29 Oct 1991, 4 pp. (United States of America). CODEN: USXXAM. CLASS: ICM: C23C016-50. ICS: C23C016-32. NCL: 427039000. APPLICATION: US 90-553918 13 Jul 1990. DOCUMENT TYPE: Patent CA Section: 75 (Crystallography and Liquid Crystals) Di-tert-butylsilane vapor is introduced into a CVD reaction zone contg. a substrate, where the temp. is kept at 100-400° and the pressure is kept at 0.01-10 torr, and the gas is passed into contact with the substrate while it is excited with a plasma for a time sufficient to form a SiC film on the substrate; the plasma is excited by d.c. or radio-frequency power of 10-500 W. .