Reference

Synthesis of g-aminopropyl-substituted siloxanes and their emulsion copolymerization with octamethylcyclotetrasiloxane

Synthesis of g-aminopropyl-substituted siloxanes and their emulsion copolymerization with octamethylcyclotetrasiloxane. Du, Zuodong; Zhou, Chongguang (Dep. Chem., Shandong Univ., Jinan, Peop. Rep. China). Gaofenzi Tongxun, (4), 277-82 (Chinese) 1984. CODEN: KFTTAR. ISSN: 0453-2880. DOCUMENT TYPE: Journal CA Section: 35 (Chemistry of Synthetic High Polymers) Section cross-reference(s): 28 g-Aminopropylheptamethylcyclotetrasiloxane (I) [1030-77-9] and g-aminopropylmethyldiethoxysilane (II) [3179-76-8] were synthesized. Emulsion copolymns. of octamethylcyclotetrasiloxane with I and II were carried out in cationic and anionic emulsifiers. The effects of the amt. of the catalyst, the molar ratio of the copolymn. monomers, the concn. of the monomers and the temp. on the exptl. results were discussed.

Potting compositions for semiconductors

Potting compositions for semiconductors. Ogata, Masaji; Abe, Hidetoshi; Segawa, Masanori; Ikeda, Takae; Nishikawa, Akio (Hitachi, Ltd., Japan). Jpn. Kokai Tokkyo Koho JP 61125155 A2 12 Jun 1986 Showa, 4 pp. (Japan) CODEN: JKXXAF.Chemicals with cas numbers 3179-76-8 and 7631-86-9 also play role. CLASS: ICM: H01L023-30. ICS: C08K003-22; C08K005-02; C08L063-00. APPLICATION: JP 84-246050 22 Nov 1984. DOCUMENT TYPE: Patent CA Section: 38 (Plastics Fabrication and Uses) Section cross-reference(s): 76 Semiconductor devices having Al materials as electrodes and/or wires are potted with nonflammable epoxy resin compns. contg. org. halides and Sb2O3 (contg. 395 wt.% of particle size ￡0.1 m), which show excellent reliability under high-temp. and high-moisture conditions. Thus, 4 parts ball-milled Sb2O3 (av. particle size 0.02 m) was mixed with cresol novolak-type epoxy resin 80, phenol novolak resin 45, brominated phenol novolak epoxy resin 20, tetrabutylphosphonium tetrabutylborate 2, SiO2 400, 3-aminopropylmethyldiethoxysilane 1, carbon black 1, and polyethylene wax 1 part and then fuse mixed for ~10 min at 80°. A semiconductor device with zig-zag wiring of Al-2% Si alloy on SiO2 (formed on Si wafer) was transfer molded with the above compn. and heated at 180° to give a potted semiconductor, which showed nonflammability V-O (UL-94). The wiring short-circuited after 1050 h due to Al corrosion. .