Detail of "3236-82-6"

Reference

Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films

All Rights Reserved. Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films.Several substances are used for example 1314-61-0 and 3236-82-6 which are their cas registry numbers. Masse, J.-P.; Szymanowski, H.; Zabeida, O.; Amassian, A.; Klemberg-Sapieha, J. E.; Martinu, L. (Regroupement Quebecois sur les Materiaux de Pointe (RQMP) and Department of Engineering Physics, Ecole Polytechnique de Montreal, Quebec H3C 3A7, Can.). Thin Solid Films, 515(4), 1674-1682 (English) 2006 Elsevier B.V. CODEN: THSFAP. ISSN: 0040-6090. DOCUMENT TYPE: Journal CA Section: 57 (Ceramics) Section cross-reference(s): 73, 78 Tantalum and niobium oxide optical thin films were prepd. at room temp. by plasma-enhanced chem. vapor deposition using tantalum and niobium pentaethoxide (M(OC2H5)5) precursors. We studied the evolution of their optical and microstructural properties as a result of annealing over a broad temp. range from room temp. up to 900 °C. The as-deposited films were amorphous; their refractive index, n, and extinction coeff., k, at 550 nm were n = 2.13 and k < 10-4 for Ta2O5, and n = 2.24 and k < 10-4 for Nb2O5. The films contained a small amt. of residual carbon (2-6 at.%) bonded mostly to oxygen. During annealing, the onset of crystn. was obsd. at ~TC1 = 650°C for Ta2O5 and at TC1 = 450°C for Nb2O5. Upon annealing close to T1 (300°C for Nb2O5 and 400°C for Ta2O5), n at 550 nm decreased by <1%. This was correlated with the decrease of carbon content, as suggested by FTIR spectroscopy, elastic recoil detection and static secondary ion mass spectroscopy (SIMS) results. During annealing, we obsd. phase transition from the d (hexagonal) phase to the L (orthorhombic) phase at 800-900°C for Ta2O5, and 600-700°C for Nb2O5. The structural changes were also marked by silicon diffusion from the substrate into the oxide layer at annealing temp. >500°C for Ta2O5 and >400°C for Nb2O5. As a consequence of oxygen, silicon and metal interdiffusion, the interface between the Si substrate and the metal oxide (Ta2O5 or Nb2O5) is characterized by its broadening, well documented by spectroscopic ellipsometry and SIMS data. .

Crystallization behavior of KNbO3 series precursors synthesized by CSD process

All Rights Reserved. Crystallization behavior of KNbO3 series precursors synthesized by CSD process. Tanaka, Kiyotaka; Kakimoto, Ken-ichi; Ohsato, Hitoshi (21st Century COE Project, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan).Chemicals with cas numbers 3236-82-6 and 12030-85-2 also play role. Key Engineering Materials, 320(Electroceramics in Japan IX), 85-88 (English) 2006 Trans Tech Publications Ltd. CODEN: KEMAEY. ISSN: 1013-9826. DOCUMENT TYPE: Journal CA Section: 75 (Crystallography and Liquid Crystals) The development of Pb-free piezoelec. materials was required from the viewpoint of environmental preservation. We focused the Pb-free KNbO3-based systems, and used a chem. soln. deposition (CSD) process to obtain their precursor. (Na1-xKx)NbO3 precursor solns. were prepd. from metal alkoxides and solvents such as abs. EtOH and 2-methoxyethanol. Crystn. behavior of the precursor gels obtained from the above solns. was investigated by TG-DTA measurement. .