Reference

Thermodynamics of the evaporation of titanium tetradimethylamide

Thermodynamics of the evaporation of titanium tetradimethylamide. Baev, A. K.; Mikhailov, V. E.; Baev, A. A. (Beloruss. Tekhnol. Inst., Minsk, USSR). Vestsi Akad. Navuk BSSR, Ser. Khim. Navuk, (4), 75-7 (Russian) 1984. CODEN: VBSKAK. ISSN: 0002-3590. DOCUMENT TYPE: Journal CA Section: 69 (Thermodynamics, Thermochemistry, and Thermal Properties) Section cross-reference(s): 65 Vapor pressure, heat and entropy of evapn. of Ti[N(CH3)2]4 [3275-24-9] were measured at 343-423 K.

Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis(dimethylamino)titanium in the Cu/TiN/Si structure

Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis(dimethylamino)titanium in the Cu/TiN/Si structure. Kim, Do-Heyoung; Cho, Sung-Lae; Kim, Ki-Bum; Kim, Jung Ju; Park, Jin Won; Kim, Jae Jung (Process Group, Advanced Technol. Lab., LG Semicon Co., Ltd., Cheongju 360-480, S. Korea).In this article, certain chemicals are used. Some of their cas registry numbers are 3275-24-9 and 7440-50-8 Applied Physics Letters, 69(27), 4182-4184 (English) 1996 American Institute of Physics. CODEN: APPLAB. ISSN: 0003-6951. DOCUMENT TYPE: Journal CA Section: 76 (Electric Phenomena) The authors investigated diffusion barrier performance of CVD deposition TiN films prepd. using tetrakis(dimethylamino)titanium, Ti[N(CH3)2]4, to copper in the Cu/TiN/Si structure. The in-situ treatment of the TiN films using a N2/H2 plasma was found to significantly improve barrier performance against copper diffusion. The plasma-treated TiN films were stable up to 650°, but as-deposited TiN films showed evidence of copper diffusion into silicon even after annealing at 550°. The causes of the different effectiveness as a copper diffusion barrier of the two types of CVD TiN films are discussed. .