Detail of "3410-77-3"

Reference

Photoelectron spectroscopic studies of the silicon pseudohalides: relationship between geometrical and electronic structure

Photoelectron spectroscopic studies of the silicon pseudohalides: relationship between geometrical and electronic structure. Veszpremi, Tamas; Pasinszki, Tibor; Feher, Miklos (Inorg. Chem. Dep., Tech. Univ. Budapest, Budapest H-1521, Hung.). J. Chem. Soc., Faraday Trans., 87(24), 3805-10 (English) 1991.Several substances with their cas registry numbers 119336-68-4 and 3410-77-3 may be metioned in this study. CODEN: JCFTEV. ISSN: 0956-5000. DOCUMENT TYPE: Journal CA Section: 73 (Optical, Electron, and Mass Spectroscopy and Other Related Properties) The He I photoelectron spectra of the mols. (CH3)nY(NCX)4-n (Y = C, Si and X = O, S and Se) were recorded and analyzed on the basis of ab initio hartree-fock SCF calcns. Optimized geometries for the mols. with n = 3 were obtained. The pseudolinear behavior and its effect on the photoelectron spectra was investigated. The inclusion of correlation in the calcns. is important to predict the geometry of these mols. correctly. .

Pattern coating material and pattern forming method

All Rights Reserved. Pattern coating material and pattern forming method.In this study， 3410-77-3 and 98-82-8 are also used. Matsumaru, Shogo; Ogata, Toshiyuki; Ishikawa, Kiyoshi; Hada, Hideo; Fujikawa, Shigenori; Kunitake, Toyoki (Tokyo Ohka Kogyo Co., Ltd.; Riken Corp., Japan). PCT Int. Appl. WO 2006137342 A1 28 Dec 2006, 52pp. DESIGNATED STATES: W: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MD, MG, MK, MN, MW, MX, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA; RW: AT, BE, BF, BJ, CF, CG, CH, CI, CM, CY, DE, DK, ES, FI, FR, GA, GB, GR, IE, IS, IT, LU, MC, ML, MR, NE, NL, PT, SE, SN, TD, TG, TR. (Japanese). (World Intellectual Property Organization). CODEN: PIXXD2. APPLICATION: WO 2006-JP312136 16 Jun 2006. PRIORITY: JP 2005-184674 24 Jun 2005. DOCUMENT TYPE: Patent CA Section: 76 (Electric Phenomena) Disclosed is a coating material which enables to improve the etching resistance of a pattern in a process wherein etching was performed using a pattern formed on a substrate as a mask. Specifically disclosed is a pattern coating material used in a process wherein etching was performed using a pattern formed on a substrate as a mask, which pattern coating material contains a metal compd. (W) which can generate a hydroxyl group through hydrolysis. .